Электронная библиотека (репозиторий) Томского государственного университета
Chsherbakov, I. | Tyazhev, Anton V.

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Add   Characterization of GaAs:Cr sensors using the charge-integrating JUNGFRAU readout chip
Authors: Andrä, M. | Barten, R. | Busca, P. | Brückner, M. | Chiriotti Alvarez, S. | Chsherbakov, I. | Dinapoli, R. | Fajardo, P. | Lopez-Cuenca, C. | Lozinskaya, A. D. | Meyer, M. | Mezza, D. | Mozzanica, A. | Redford, S. | Tolbanov, Oleg P. | Tyazhev, Anton V. | Zarubin, A. N. | Greiffenberg, D. | Fröjdh, E. | Bergamaschi, A.
Source: Journal of instrumentation : electronic journal. 2019. Vol. 14, № 5. P. P05020 (1-17)
Type: статьи в журналах
Date: 2019
Description: Chromium compensated GaAs sensors have been characterized using the charge-integrating readout chip JUNGFRAU. Due to its low noise performance and 75 × 75 μm2 pixel size, JUNGFRAU enables a precise me ... More
Add   The influence of contact material and its fabrication on X-ray HR-GaAs:Cr sensor noise characteristics
Authors: Chsherbakov, P. | Kolesnikova, I. | Lozinskaya, A. D. | Mihaylov, T. | Novikov, Vladimir A. | Tolbanov, Oleg P. | Tyazhev, Anton V. | Zarubin, A. N. | Chsherbakov, I.
Source: Journal of instrumentation : electronic journal. 2019. Vol. 14, № 1. P. C01026 (1-7)
Type: статьи в журналах
Date: 2019
Description: In this research the HR-GaAs:Cr sensors noise characteristics were investigated by means of amplitude spectrum analysis. Noise characteristics of HR-GaAs:Cr sensors with different metal contacts were ... More
Add   GaAs:Cr X-ray sensors noise characteristics investigation by means of amplitude spectrum analysis
Authors: Chsherbakov, I. | Lozinskaya, A. D. | Mihaylov, T. | Novikov, V. | Shemeryankina, A. | Tolbanov, Oleg P. | Tyazhev, Anton V. | Zarubin, A. N. | Kolesnikova, I.
Source: Journal of instrumentation : electronic journal. 2018. Vol. 13, № 1. P. C01030 (1-7)
Type: статьи в журналах
Date: 2018
Description: The investigation results of GaAs:Cr X-ray sensor noise characteristics are presented. Measured samples were 3*3 mm2 and thickness in the range of 300–500 μm. It is shown that the proposed method can ... More
Add   Electron mobility-lifetime and resistivity mapping of GaAs:Cr wafers
Authors: Chsherbakov, I. | Lozinskaya, A. D. | Mihaylov, T. | Novikov, Vladimir A. | Shemeryankina, A. | Tolbanov, Oleg P. | Tyazhev, Anton V. | Zarubin, A. N. | Kolesnikova, I.
Source: Journal of instrumentation : electronic journal. 2017. Vol. 12, № 2. P. C02016 (1-8)
Type: статьи в журналах
Date: 2017
Description: Previous works onchromium compensated gallium arsenide (GaAs:Cr) have shown high efficiency, good spatial and energy resolution, which is obviously connected with the high quality of material itself. ... More
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