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Authors:
Abramkin, Demid S. |
Petrushkov, Mikhail O. |
Bogomolov, Dmitrii B. |
Emelyanov, Eugeny A. |
Yesin, Michail Yu. |
Vasev, Andrey V. |
Bloshkin, Aleksei A. |
Koptev, Eugeny S. |
Putyato, Mikhail A. |
Atuchin, Victor V. |
Preobrazhenskii, Valery V.
Source: Nanomaterials. 2023. Vol. 13, № 5. P. 910 (1-20)
Type: статьи в журналах
Date: 2023
Description:
In this work, the formation, structural properties, and energy spectrum of novel self-assembled GaSb/AlP quantum dots (SAQDs) were studied by experimental methods. The growth conditions for the SAQDs’
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Authors:
Petrushkov, Mikhail O. |
Abramkin, Demid S. |
Emelyanov, Eugeny A. |
Putyato, Mikhail A. |
Komkov, Oleg S. |
Firsov, Dmitrii D. |
Vasev, Andrey V. |
Yesin, Michail Yu. |
Bakarov, Askhat K. |
Loshkarev, Ivan D. |
Gutakovskii, Anton K. |
Atuchin, Victor V. |
Preobrazhenskii, Valery V.
Source: Nanomaterials. 2022. Vol. 12, № 24. P. 4449 (1-19)
Type: статьи в журналах
Date: 2022
Description:
The use of low-temperature (LT) GaAs layers as dislocation filters in GaAs/Si heterostructures (HSs) was investigated in this study. The effects of intermediate LT-GaAs layers and of the post-growth a
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Source: Nanomaterials. 2022. Vol. 12, № 21. P. 3794 (1-20)
Type: статьи в журналах
Date: 2022
Description:
Non-volatile memories based on the flash architecture with self-assembled III–V quantum dots (SAQDs) used as a floating gate are one of the prospective directions for universal memories. The central g
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