Электронная библиотека (репозиторий) Томского государственного университета
Antipov, Oleg L. | Zhuravlyova, Yelena V.

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Add   Effect of postgrowth processing technology and laser radiation parameters at wavelengths of 2091 and 1064 nm on the laser-induced damage threshold in ZnGeP2 single crystal
Authors: Yudin, Nikolay N. | Antipov, Oleg L. | Gribenyukov, Alexander I. | Eranov, Ilya D. | Podzyvalov, Sergey N. | Zinoviev, Mikhail M. | Voronin, L. A. | Zhuravlyova, Yelena V. | Zykova, M. P.
Source: Quantum electronics. 2021. Vol. 51, № 4. P. 306-316
Type: статьи в журналах
Date: 2021
Description: We report a study of the effect of postgrowth treatment of ZnGeP2 single crystals (low-temperature annealing, irradiation with fast electrons, polishing of working surfaces) and the conditions of expo ... More
Add   Laser-induced damage threshold of nonlinear GaSe and GaSe:In crystals upon exposure to pulsed radiation at a wavelength of 2.1 μm
Authors: Zhu, Chongqiang | Dyomin, Victor V. | Yudin, Nikolay N. | Antipov, Oleg L. | Verozubova, Galina | Eranov, Ilya D. | Zinoviev, Mikhail M. | Podzyvalov, Sergey N. | Zhuravlyova, Yelena V. | Slyunko, Elena S. | Yang, Chunhui
Source: Applied sciences. 2021. Vol. 11, № 3. P. 1208 (1-10)
Type: статьи в журналах
Date: 2021
Description: The paper defined the laser-induced damage threshold from the fluence and the peak power of GaSe and GaSe:In single crystals upon exposure to nanosecond radiation in the two micron range and assessed ... More
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