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Source: Nanoscale research letters. 2018. Vol. 13. P. 29 (1-8)
Type: статьи в журналах
Date: 2018
Description:
The dependences of the two-dimensional to three-dimensional growth (2D-3D) critical transition thickness on the composition for GeSiSn films with a fixed Ge content and Sn content from 0 to 16% at the
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Source: Journal of molecular structure. 2018. Vol. 1151. P. 186-190
Type: статьи в журналах
Date: 2018
Description:
Four hybrid 3,3'-(alkane-1,n-di-yl)-bis(1-methyl-1H-imidazole-3-ium) halobismuthates were prepared by a facile solution route and characterized by diffuse reflectance spectra and photoluminescence mea
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Source: Известия высших учебных заведений. Физика. 2018. Т. 61, № 2. С. 8-11
Type: статьи в журналах
Date: 2018
Description:
Представлены результаты исследования влияния толщины барьерных слоев GaN в активной области светодиодных структур с квантовыми ямами InGaN/GaN на внутреннюю квантовую эффективность (Internal Quantum E
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