Электронная библиотека (репозиторий) Томского государственного университета
2019 | Voytsekhovskiy, Alexander V. | адмиттанс

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Add   Admittance dependences of the mid-wave infrared barrier structure based on HgCdTe grown by molecular beam epitaxy
Authors: Nesmelov, Sergey N. | Dzyadukh, Stanislav M. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Sidorov, Georgiy Yu. | Yakushev, Maxim V. | Voytsekhovskiy, Alexander V.
Source: Materials research express. 2019. Vol. 6, № 11. P. 116411 (1-7)
Type: статьи в журналах
Date: 2019
Description: The admittance of nBn structures based on HgCdTe grown by molecular beam epitaxy (MBE) on GaAs (013) substrates was studied. The measurements were performed in the temperature range of 10–310 K at the ... More
Add   Admittance of organic LED structures with an emission YAK-203 layer
Authors: Nesmelov, Sergey N. | Dzyadukh, Stanislav M. | Kopylova, Tatyana N. | Degtyarenko, Konstantin M. | Kokhanenko, Andrey P. | Voytsekhovskiy, Alexander V.
Source: Russian physics journal. 2019. Vol. 62, № 2. P. 306-313
Type: статьи в журналах
Date: 2019
Description: The current-voltage characteristics and admittance of multilayer structures for organic LEDs based on the PEDOT:PSS/NPD/YAK-203/BCP system have been experimentally investigated in a wide range of the ... More
Add   Electrophysical characteristics of the pentacene-based MIS structures with a SiO2 insulator
Authors: Voytsekhovskiy, Alexander V. | Nesmelov, Sergey N. | Dzyadukh, Stanislav M. | Kopylova, Tatyana N. | Degtyarenko, Konstantin M. | Chernikov, E. V. | Kalygina, V. M. | Novikov, Vadim A.
Source: Russian physics journal. 2019. Vol. 62, № 1. P. 90-99
Type: статьи в журналах
Date: 2019
Description: In a wide range of frequencies and temperatures, the admittance of MIS structures based on pentacene organic films, formed by thermal evaporation in vacuum on SiO2 and SiO2/Ga2O3 substrates, was exper ... More
Add   Peculiarities of modeling the frequency dependences of admittance of MIS structure based on organic P3HT film with an insulator Al2O3 layer
Authors: Voytsekhovskiy, Alexander V. | Nesmelov, Sergey N. | Dzyadukh, Stanislav M.
Source: Russian physics journal. 2019. Vol. 61, № 11. P. 2126-2134
Type: статьи в журналах
Date: 2019
Description: For the depletion and accumulation modes, equivalent circuits of MIS structure based on an organic P3HT thin film with an Al2O3 insulator are proposed. The frequency dependences of the capacitance and ... More
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