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Description | Size | Format | ||
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Influence of composition of the near-surface graded-gap layer on the admittance of metal-insulator-semiconductor structures based on graded-gap MBE n-Hg1–xCdxTe in wide temperature range | 5 MB | Adobe Acrobat PDF | View Details | Download |
DOI Доступ к ресурсу на сайте издателя | 10.2478/s11772−014−0198−7 |