Электронная библиотека (репозиторий) Томского государственного университета
Voytsekhovskiy, Alexander V. | 2018

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Add   Nanostructures with Ge-Si quantum dots for infrared photodetectors
Authors: Fitsych, Olena I. | Voytsekhovskiy, Alexander V. | Kokhanenko, Andrey P. | Lozovoy, Kirill A. | Dirko, V. V. | Izhnin, Igor I.
Source: Opto-electronics review. 2018. Vol. 26, № 3. P. 195-200
Type: статьи в журналах
Date: 2018
Description: In this paper questions of optimization of growth conditions in the method of molecular beam epitaxy for creation of high-efficient quantum dot infrared photodetectors are considered. As a model mater ... More
Add   The relaxation of electrophysical properties of MCT epitaxial films after influence of a high frequency nanosecond volume discharge in atmospheric pressure air
Authors: Grigoryev, Denis V. | Voytsekhovskiy, Alexander V. | Tarasenko, Viktor Fedotovich | Ripenko, V. S. | Shulepov, Mikhail A. | Erofeev, Mikhail V. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Ermachenkov, P. A.
Source: 6th International congress on energy fluxes and radiation effects (EFRE 2018), September 16-22, 2018, Tomsk, Russia : abstracts. Tomsk, 2018. P. 349
Type: статьи в сборниках
Date: 2018
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