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Source: Russian physics journal. 2018. Vol. 60, № 11. P. 1853-1863
Type: статьи в журналах
Date: 2018
Description:
Admittance of MIS structures based on n(p)- Hg1–xCdxTe (at x from 0.22 to 0.40) with SiO2/Si3N4, Al2O3, and CdTe/Al2O3 insulators is studied experimentally at 77 K. Growth of an intermediate CdTe laye
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Source: Infrared physics and technology. 2015. Vol. 71. P. 236-241
Type: статьи в журналах
Date: 2015
Description:
Metal–insulator–semiconductor structures based on n-Hg1−xCdxTe (x = 0.19–0.25) were grown by molecular-beam epitaxy on the GaAs (0 1 3) substrates. Near-surface graded-gap layers with high CdTe conten
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