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Authors:
Syvorotka, I. I. |
Fitsych, Olena I. |
Varavin, Vasilii S. |
Dvoretsky, Sergei A. |
Marin, D. V. |
Mikhailov, Nikolay N. |
Remesnik, V. G. |
Yakushev, Maxim V. |
Mynbaev, Karim D. |
Izhnin, Igor I. |
Voytsekhovskiy, Alexander V. |
Korotaev, A. G.
Source: Semiconductor science and technology. 2019. Vol. 34, № 3. P. 035009 (1-7)
Type: статьи в журналах
Date: 2019
Description:
The results from the electrical profiling of an n-on-p junction formed by 190-keV arsenic ion implantation in an indium/vacancy–doped Hg0.78Cd0.22Te film are presented. Mobility spectrum analysis in c
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Authors:
Savytskyy, Hrygory V. |
Świątek, Zbigniew |
Morgiel, Y. |
Izhnin, Igor I. |
Voytsekhovskiy, Alexander V. |
Korotaev, A. G. |
Mynbaev, Karim D. |
Fitsych, Olena I. |
Varavin, Vasilii S. |
Bonchyk, A. Yu. |
Dvoretsky, Sergei A. |
Marin, Denis V. |
Yakushev, Maxim V.
Source: Applied nanoscience. 2019. Vol. 9, № 5. P. 725-730
Type: статьи в журналах
Date: 2019
Description:
Radiation damage and its transformation under annealing were studied with bright-field and high-resolution transmission electron microscopy for arsenic-implanted HgCdTe films with graded-gap surface l
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