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Source: Proceedings of SPIE. 2017. Vol. 10173 : Fourth International symposium on laser interaction with matter. P. 101731W-1-101731W-6
Type: статьи в журналах
Date: 2017
Description:
We launched into a development of a new stand-off sensing system that can detect atmospheric and hazardous gases in real atmosphere utilizing THz technology. Narrow line width, <0.1 cm-1, long-wave (m
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Source: Key engineering materials. 2016. Vol. 683. P. 237-242
Type: статьи в журналах
Date: 2016
Description:
It was demonstrated that S- and Te-doped GaSe crystals are useful and prospective for mid-IR and THz generation by optical rectification as well as phase matched mixing of spectral components of the f
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Source: Optics express. 2015. Vol. 23, № 25. P. 32820-32834
Type: статьи в журналах
Date: 2015
Description:
High optical quality nonlinear crystals of solid solution GaSe1−xSx, x=0, 0.05, 0.11, 0.22, 0.29, 0.44, 1 were grown by modified Bridgman method with heat field rotation. Ordinary and extraordinary wa
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Authors:
Guo, Jin |
Li, Dian-Jun |
Yang, Gui-Long |
Chen, Fei |
Wang, Chun-Rui |
Zhang, Lai-Ming |
Andreev, Yury M. |
Kokh, Konstantin A. |
Lanskii, Grigory V. |
Xie, Ji-Jiang |
Svetlichnyi, Valerii A.
Source: Light: Science & Applications. 2015. Vol. 4. P. e362 (1-12)
Type: статьи в журналах
Date: 2015
Description:
In this review, we introduce the current state of the art of the growth technology of pure, lightly doped, and heavily doped (solid solution) nonlinear gallium selenide (GaSe) crystals that are able t
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Source: Effect of external influences on the strength and plasticity of metals and alloys : book of the International workshop articles, Russia-China, 15-20 September, 2015 [Barnaul-Belokurikha]. Барнаул, 2015. P. 185-186
Type: статьи в сборниках
Date: 2015
Source: Bulletin of the Russian Academy of Sciences: Physics. 2015. Vol. 79, № 2. P. 238-241
Type: статьи в журналах
Date: 2015
Description:
GaSe crystals with 0, 0.07, 0.38, 0.67, 2.07, 3, and 5 wt % Te are grown. GaSe:Te (≤2.07 wt %) crystals are suitable for nonlinear optics applications. The optimum doping level is 0.07 wt %. This mini
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Source: Materials Chemistry and Physics. 2015. Vol. 154. P. 152-157
Type: статьи в журналах
Date: 2015
Source: Proceedings of SPIE. 2015. Vol. 9810 : XII International Conference on Atomic and Molecular Pulsed Lasers, 13–18 September 2015, Tomsk, Russian Federation. P. 981012-1-981012-10
Type: статьи в журналах
Date: 2015
Description:
Ab-initio study on modification of commerce terahertz spectrometer with time resolution Z-3 (Zomega, USA) by substitution of ZnTe and GaP detectors and LT-GaAs generator for homemade of pure and S-dop
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Source: Proceedings of SPIE. 2015. Vol. 9810 : XII International Conference on Atomic and Molecular Pulsed Lasers, 13–18 September 2015, Tomsk, Russian Federation. P. 98101P-1-98101P-7
Type: статьи в журналах
Date: 2015
Description:
Design of top S-doped GaSe growth technology is completed. New methods for characterization of high optical quality crystals are proposed that allowed selection optimally doped crystals. Frequency con
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Source: Journal of materials science: materials in electronics. 2014. Vol. 25. P. 1757-1760
Type: статьи в журналах
Date: 2014
Authors:
Guo, Jin |
Xie, Ji-Jiang |
Zhang, Lai-Ming |
Gao, J.-Y. |
Andreev, Yury M. |
Izaak, Tatyana I. |
Kokh, Konstantin A. |
Lanskii, Grigory V. |
Shaiduko, Anna V. |
Shabalina, Anastasiia V. |
Svetlichnyi, Valerii A. |
Feng, Z.-S.
Source: Optics Communications. 2014. Vol. 318. P. 205-211
Type: статьи в журналах
Date: 2014
Authors:
Kang, Z.-H. |
Li, X.-M. |
Wang, Zeng-Bin |
Gao, J.-Y. |
Andreev, Yury M. |
Atuchin, Victor V. |
Kokh, Konstantin A. |
Lanskii, Grigory V. |
Potekaev, Aleksandr I. |
Shaiduko, Anna V. |
Svetlichnyi, Valerii A. |
Feng, Z.-S.
Source: AIP Advances. 2014. Vol. 4, Issue 3. P. 037104-1-037104-6
Type: статьи в журналах
Date: 2014
Authors:
Guo, Jin |
Li, Dian-Jun |
Xie, Ji-Jiang |
Zhang, Lai-Ming |
Feng, Z.-S. |
Andreev, Yury M. |
Kokh, Konstantin A. |
Lanskii, Grigory V. |
Potekaev, Aleksandr I. |
Shaiduko, Anna V. |
Svetlichnyi, Valerii A.
Source: Laser physics letters. 2014. Vol. 11, № 5. P. 055401 (1-32)
Type: статьи в журналах
Date: 2014
Description:
High optical quality undoped and sulfur-doped gallium selenide crystals were grown from melts by the modified vertical Bridgman method. Detailed study of the damage produced under femtosecond pulse ex
... More
Authors:
Xie, Ji-Jiang |
Zhang, Lai-Ming |
Li, Dian-Jun |
Yang, Gui-Long |
Andreev, Yury M. |
Kokh, Konstantin A. |
Lanskii, Grigory V. |
Shabalina, Anastasiia V. |
Shaiduko, Anna V. |
Svetlichnyi, Valerii A. |
Guo, Jin
Source: CrystEngComm. 2013. Vol. 15, № 32. P. 6323-6328
Type: статьи в журналах
Date: 2013
Authors:
Zhu, Wei-Zhen A. |
Luo, Zhi- Wei |
Andreev, Yury M. |
Lanskii, Grigory V. |
Shaiduko, Anna V. |
Izaak, Tatyana I. |
Svetlichnyi, Valerii A. |
Vaytulevich, Elena A. |
Zuev, Vladimir V. |
Gu, Xin-An
Source: Chinese optics. 2011. Vol. 4, № 6. P. 660-666
Type: статьи в журналах
Date: 2011