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Authors:
Xie, Ji-Jiang |
Zhang, Lai-Ming |
Li, Dian-Jun |
Yang, Gui-Long |
Andreev, Yury M. |
Kokh, Konstantin A. |
Lanskii, Grigory V. |
Shabalina, Anastasiia V. |
Shaiduko, Anna V. |
Svetlichnyi, Valerii A. |
Guo, Jin
Source: CrystEngComm. 2013. Vol. 15, № 32. P. 6323-6328
Type: статьи в журналах
Date: 2013
Authors:
Guo, Jin |
Zhang, Lai-Ming |
Li, Dian-Jun |
Yang, Gui-Long |
Chen, Fei |
Jiang, Ke |
Evdokimov, M. E. |
Nazarov, Maxim M. |
Andreev, Yury M. |
Lanskii, Grigory V. |
Kokh, Konstantin A. |
Kokh, A. E. |
Svetlichnyi, Valerii A. |
Xie, Ji-Jiang
Source: Optics Communications. 2013. Vol. 287. P. 145-149
Type: статьи в журналах
Date: 2013
Authors:
Guo, Jin |
Li, Dian-Jun |
Yang, Gui-Long |
Chen, Fei |
Wang, Chun-Rui |
Zhang, Lai-Ming |
Andreev, Yury M. |
Kokh, Konstantin A. |
Lanskii, Grigory V. |
Xie, Ji-Jiang |
Svetlichnyi, Valerii A.
Source: Light: Science & Applications. 2015. Vol. 4. P. e362 (1-12)
Type: статьи в журналах
Date: 2015
Description:
In this review, we introduce the current state of the art of the growth technology of pure, lightly doped, and heavily doped (solid solution) nonlinear gallium selenide (GaSe) crystals that are able t
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