Электронная библиотека (репозиторий) Томского государственного университета
Remizova, I. L.

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Add   Conductivity of Ga2O3-GaAs heterojunctions
Authors: Kalygina, V. M. | Remizova, I. L. | Tolbanov, Oleg P.
Source: Semiconductors. 2018. Vol. 52, № 2. P. 143-149
Type: статьи в журналах
Date: 2018
Description: The effect of annealing in argon at temperatures of Tan = 700–900°C on the I–V characteristics of metal–Ga2O3–GaAs structures is investigated. Samples are prepared by the thermal deposition of Ga2O3 p ... More
Add   Effect of thermal annealing on electrical characteristics of Ga2Oy-GaAs structures
Authors: Kalygina, V. M. | Remizova, I. L. | Tolbanov, Oleg P. | Prudaev, Ilya A.
Source: The international workshop on UV materials and devices, July 27-31, 2016, Beijing, China. [S. l.], 2016. P. 88-89
Type: статьи в сборниках
Date: 2016
Add   Photoelectrical characteristics of GaxOy-GaAs-structures
Authors: Kalygina, V. M. | Remizova, I. L. | Tolbanov, Oleg P. | Prudaev, Ilya A.
Source: The international workshop on UV materials and devices, July 27-31, 2016, Beijing, China. [S. l.], 2016. P. 90-91
Type: статьи в сборниках
Date: 2016
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