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Authors:
Schulz, Susanne |
Vyazovskaya, Alexandra Yu. |
Poelchen, Georg |
Generalov, Alexander |
Güttler, Monika |
Mende, M. |
Danzenbächer, Steffen |
Otrokov, Mikhail M. |
Balasubramanian, T. |
Polley, C. |
Chulkov, Evgueni V. |
Laubschat, Clemens |
Peters, M. |
Kliemt, Kristin |
Krellner, Cornelius |
Usachov, Dmitry Yu. |
Vyalikh, Denis V.
Source: Physical Review B. 2021. Vol. 103, № 3. P. 035123-1-035123-14
Type: статьи в журналах
Date: 2021
Description:
We present a combined experimental and theoretical study of the two-dimensional electron states at the iridium-silicide surface of the antiferromagnet GdIr2Si2 above and below the Ned temperature. Usi
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Authors:
Usachov, Dmitry Yu. |
Vilkov, Oleg Yu. |
Petukhov, Anatoly E. |
Rybkin, Artem G. |
Ernst, Arthur |
Otrokov, Mikhail M. |
Chulkov, Evgueni V. |
Ogorodnikov, Ilya I. |
Kuznetsov, Mikhail V. |
Fedorov, Alexander V. |
Yashina, Lada V. |
Kataev, Elmar Yu. |
Erofeevskaya, Anna V. |
Voroshin, Vladimir Yu. |
Adamchuk, Vera K. |
Laubschat, Clemens |
Vyalikh, Denis V.
Source: Nano letters. 2016. Vol. 16, № 7. P. 4535-4543
Type: статьи в журналах
Date: 2016
Description:
The implementation of future graphene-based electronics is essentially restricted by the absence of a band gap in the electronic structure of graphene. Options of how to create a band gap in a reprodu
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Authors:
Güttler, M. |
Otrokov, Mikhail M. |
Kummer, K. |
Kliemt, K. |
Fedorov, Alexander V. |
Chikina, Alla |
Danzenbächer, S. |
Schulz, S. |
Chulkov, Evgueni V. |
Generalov, A. |
Koroteev, Yury M. |
Caroca-Canales, N. |
Shi, M. |
Radovic, M. |
Geibel, C. |
Laubschat, Clemens |
Krellner, C. |
Vyalikh, Denis V. |
Dudin, P. |
Kim, T. K. |
Hoesch, M.
Source: Scientific Reports [Еlectronic resource]. 2016. Vol. 6. P. 24254 (1-11)
Type: статьи в журналах
Date: 2016
Description:
Spin-polarized two-dimensional electron states (2DESs) at surfaces and interfaces of magnetically active materials attract immense interest because of the idea of exploiting fermion spins rather than
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Authors:
Usachov, Dmitry Yu. |
Petukhov, Anatoly E. |
Vilkov, Oleg Yu. |
Rybkin, Artem G. |
Otrokov, Mikhail M. |
Arnau, Andrés |
Chulkov, Evgueni V. |
Yashina, Lada V. |
Farjam, Mani |
Fedorov, Alexander V. |
Adamchuk, Vera K. |
Senkovskiy, Boris V. |
Laubschat, Clemens |
Vyalikh, Denis V.
Source: ACS Nano. 2015. Vol. 9. P. 7314-7322
Type: статьи в журналах
Date: 2015
Description:
Embedding foreign atoms or molecules in graphene has become the key approach in its functionalization and is intensively used for tuning its structural and electronic properties. Here, we present an e
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Authors:
Usachov, Dmitry Yu. |
Gruneis, Alexander |
Laubschat, Clemens |
Vyalikh, Denis V. |
Otrokov, Mikhail M. |
Chikina, Alla |
Vilkov, Oleg Yu. |
Petukhov, Anatoly E. |
Rybkin, Artem G. |
Koroteev, Yury M. |
Chulkov, Evgueni V. |
Adamchuk, Vera K. |
Fedorov, Alexander V.
Source: Nano letters. 2015. Vol. 15, № 4. P. 2396-2401
Type: статьи в журналах
Date: 2015
Description:
With the discovery and first characterization of graphene, its potential for spintronic applications was recognized immediately. Since then, an active field of research has developed trying to overcom
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