Электронная библиотека (репозиторий) Томского государственного университета
Aksenov, Maxim S.
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    Add   Fluorine and oxygen adsorption and their coadsorption on the (111) surface of InAs and GaAs
    Authors: Bakulin, Alexander V. | Aksenov, Maxim S. | Valisheva, Natalia A. | Kulkova, Svetlana E.
    Source: The Journal of Physical Chemistry C. 2016. Vol. 120, № 31. P. 17491-17500
    Type: статьи в журналах
    Date: 2016
    Description: Oxygen and fluorine adsorption and their coadsorption on the (111) unreconstructed surface of semiconductors InAs and GaAs were studied using the projector augmented-wave method with the generalized g ... More
    Add   Ferromagnetic HfO2/Si/GaAs interface for spin-polarimetry applications
    Authors: ereshchenko, Oleg E. | Eremeev, Sergey V. | Maurin, I. | Bakulin, Alexander V. | Kulkova, Svetlana E. | Aksenov, Maxim S. | Preobrazhenskii, V. V. | Putyato, M. A. | Semyagin, B. R. | Golyashov, V. A. | Dmitriev, D. V. | Toropov, A. I. | Gutakovskii, A. K. | Khandarkhaeva, S. E. | Prosvirin, I. P.
    Source: Applied physics letters. 2015. Vol. 107, № 12. P. 123506-1-123506-5
    Type: статьи в журналах
    Date: 2015
    Description: In this letter, we present electrical and magnetic characteristics of HfO2-based metal-oxide-semiconductor capacitors (MOSCAPs), along with the effect of pseudomorphic Si as a passivating interlayer o ... More
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