Электронная библиотека (репозиторий) Томского государственного университета
статьи в журналах | электронные свойства

Add to Quick Collection   All 23 Results

Showing items 1 - 15 of 23.
Sort:
 Add All Items to Quick Collection
Add   Unique thickness-dependent properties of the van der Waals interlayer antiferromagnet MnBi2Te4 films
Authors: Rusinov, I. P. | Blanco-Rey, M. | Hoffmann, M. | Vyazovskaya, A. Yu. | Eremeev, Sergey V. | Ernst, A. | Echenique, Pedro Miguel | Arnau, Andrés | Chulkov, Evgueni V. | Otrokov, Mikhail M.
Source: Physical Review Letters. 2019. Vol. 122, № 10. P. 107202-1-107202-6
Type: статьи в журналах
Date: 2019
Description: Using density functional theory and Monte Carlo calculations, we study the thickness dependence of the magnetic and electronic properties of a van der Waals interlayer antiferromagnet in the two-dimen ... More
Add   Comment on "Structural, electronic, and optical properties of the C-C complex in bulk silicon from first principles" [J. Appl. Phys. 123, 161421 (2018)]
Authors: Lavrov, E. V.
Source: Journal of applied physics. 2018. Vol. 124, № 8. P. 086101-1-086101-2
Type: статьи в журналах
Date: 2018
Description: Recently, Timerkaeva et al. [J. Appl. Phys. 123, 161421 (2018)] reported the results of a first principles study of the di-carbon (CsCi) complex in silicon. The authors have found that CsCi may occur ... More
Add   Effects of substrate and environmental adsorbates on the electronic properties and structural stability of antimonene
Authors: Davletshin, Artur R. | Ustiuzhanina, Svetlana V. | Evazzade, Iman | Saadatmand, Danial | Dmitriev, Sergey V. | Korznikova, Elena A. | Kistanov, Andrey A.
Source: Journal of materials science. 2018. Vol. 53, № 22. P. 15559-15568
Type: статьи в журналах
Date: 2018
Description: The structural stability of some two-dimensional materials at ambient conditions is obviously attributed to their low sensitivity to exposure of humidity and air. Recently exfoliated antimonene, diffe ... More
Add   Electronic properties of the two-dimensional (Tl, Rb)/Si(1 1 1)√3x√3 compound having a honeycomb-like structure
Authors: Tupchaya, Alexandra Y. | Gruznev, Dimitry V. | Mihalyuk, Alexey N. | Eremeev, Sergey V. | Ryzhkova, M. V. | Tsukanov, D. A. | Zotov, Andrey V. | Saranin, Alexander A. | Bondarenko, Leonid V.
Source: Journal of physics: Condensed matter. 2018. Vol. 30, № 41. P. 415502 (1-7)
Type: статьи в журналах
Date: 2018
Description: Heavy metal layers having a honeycomb structure on the Si(1 1 1) surface were theoretically predicted to show prospects for possessing properties of the quantum spin Hall (QSH) insulators. The (Tl, Rb ... More
Add   Two-dimensional in-Sb compound on silicon as a quantum spin hall insulator
Authors: Eremeev, Sergey V. | Bondarenko, Leonid V. | Tupchaya, Alexandra Yu. | Yakovlev, Alexey A. | Mihalyuk, Alexey N. | Chou, Jyh-Pin | Zotov, Andrey V. | Saranin, Alexander A. | Gruznev, Dimitry V.
Source: Nano letters. 2018. Vol. 18, № 7. P. 4338-4345
Type: статьи в журналах
Date: 2018
Description: Two-dimensional (2D) topological insulator is a promising quantum phase for achieving dissipationless transport due to the robustness of the gapless edge states resided in the insulating gap providing ... More
Add   Low thermal gradient Czochralski growth of large MWO4 (M = Zn, Cd) crystals, and microstructural and electronic properties of the (010) cleaved surfaces
Authors: Bekenev, V. L. | Borovlev, Yu. A. | Galashov, E. N. | Khyzhun, O. Y. | Kozhukhov, A. S. | Pokrovsky, Lev D. | Zhdankov, V. N. | Atuchin, Victor V.
Source: Journal of optoelectronics and advanced materials. 2017. Vol. 19, № 1/2. P. 86-90
Type: статьи в журналах
Date: 2017
Description: The large optical-quality MWO4 (M = Zn, Cd) crystals of mass up to 14 (ZnWO4) and 20 (CdWO4) kg were grown by Low Thermal Gradient Czochralski Technique (LTG Cz). Crystallographic properties of MWO4(0 ... More
Add   Recent progress in quantum chemistry of hetero[8]circulenes
Authors: Baryshnikov, Gleb V. | Minaeva, Valentina A. | Ågren, Hans | Minaev, Boris F. | Karaush, Nataliya N.
Source: Molecular physics. 2017. Vol. 115, № 17/18. P. 2218-2230
Type: статьи в журналах
Date: 2017
Description: This mini-review presents recent advances in theory of electronic and spectral properties of hetero[8]circulenes used as promising fluorescent emitters for organic light-emitting diodes. Special atten ... More
Add   Влияние деформации на электронную структуру и топологические свойства соединений AIIMg_2Bi_2:(AIIMg,Ca,Sr,Ba)
Authors: Петров, Евгений Константинович | Коротеев, Юрий Михайлович | Чулков, Евгений Владимирович | Силкин, Игорь Вячеславович
Source: Письма в журнал экспериментальной и теоретической физики. 2017. Т. 105, № 8. С. 491-496
Type: статьи в журналах
Date: 2017
Description: Представлены результаты теоретического исследования электронной структуры и топологических свойств семейства соединений AnMg2Bi2 (А11 = Mg,Ca, Sr,Ba) с использованием точного обмена. Установлено, что ... More
Add   Pressure-induced topological phases of KNa2Bi
Authors: Sklyadneva, I. Yu. | Heid, Rolf | Bohnen, Klaus Peter | Echenique, Pedro Miguel | Chulkov, Evgueni V. | Rusinov, I. P.
Source: Scientific Reports [Еlectronic resource]. 2016. Vol. 6. P. 24137 (1-6)
Type: статьи в журналах
Date: 2016
Description: We report an ab initio study of the effect of hydrostatic pressure and uniaxial strain on electronic properties of KNa2Bi, a cubic bialkali bismuthide. It is found that this zero-gap semimetal with an ... More
Add   Short-range order and electronic properties of epitaxial graphene
Authors: Bobenko, N. G. | Melnikova, N. V. | Ponomarev, A. N. | Belosludtseva, A. A. | Barkalov, L. D. | Latyshev, A. M. | Istomina, E. B. | Bobenko, A. V. | Egorushkin, V. E.
Source: AIP Conference Proceedings. 2016. Vol. 1783. P. 020016-1-020016-4
Type: статьи в журналах
Date: 2016
Description: One of the most rapidly developing areas of modern materials science is the study of graphene and materials on its basis. The experimental investigations have revealed different types of defects on th ... More
Add   Atomic arrangement and electron band structure of Si(1 1 1)-ß-√3×√3-Bi reconstruction modified by alkali-metal adsorption: Ab initio study
Authors: Eremeev, Sergey V. | Gruznev, Dimitry V. | Zotov, Andrey V. | Saranin, Alexander A. | Chukurov, E. N.
Source: Journal of physics: Condensed matter. 2015. Vol. 27, № 30. P. 305003 (1-5)
Type: статьи в журналах
Date: 2015
Description: Using ab initio calculations, atomic structure and electronic properties of Si(1 1 1)$sqrt{3} imes sqrt{3}$ -Bi surface modified by adsorption of 1/3 monolayer of alkali metals, Li, Na, K, Rb and Cs, ... More
Add   Charge neutrality in epitaxial graphene on 6H-SiC(0001) via nitrogen intercalation
Authors: Caffrey, Nuala M. | Yakimova, Rositsa | Abrikosov, Igor A. | Armiento, Rickard
Source: Physical Review B. 2015. Vol. 92. P. 081409-1-081409-5
Type: статьи в журналах
Date: 2015
Description: The electronic properties of epitaxial graphene grown on SiC(0001) are known to be impaired relative to those of freestanding graphene. This is due to the formation of a carbon buffer layer between th ... More
Add   Electronic properties of GaSe, InSe, GaS and GaTe layered semiconductors: charge neutrality level and interface barrier heights
Authors: Brudnyi, Valentin N. | Sarkisov, Sergey Yu. | Kosobutsky, Alexey V.
Source: Semiconductor science and technology. 2015. Vol. 30, № 11. P. 115019 (1-9)
Type: статьи в журналах
Date: 2015
Description: Density functional theory calculations have been applied to study the structural and electronic properties of layered epsilon-GaSe, γ-InSe, β-GaS and GaTe compounds. The optimized lattice parameters h ... More
Add   On the charge neutrality level and the electronic properties of interphase boundaries in the layered ε-GaSe semiconductor
Authors: Brudnyi, Valentin N. | Sarkisov, Sergey Yu. | Kosobutsky, Alexey V.
Source: Semiconductors. 2015. Vol. 49, № 10. P. 1307-1310
Type: статьи в журналах
Date: 2015
Description: The height of the (Au, Pd, Pt, Cu, Ag, Sn, In, Al, Mg, Ca, Li, Cs)/GaSe(0001) Schottky barrier as a function of the metal work function and the energy-band offsets in InSe(0001)/GaSe(0001) and GaSe(00 ... More
Add   On the electronic properties of GaSb irradiated with reactor neutrons and its charge neutrality level
Authors: Brudnyi, Valentin N. | Ermakov, V. S. | Kolin, N. G. | Korulin, A. V. | Boiko, V. M.
Source: Semiconductors. 2015. Vol. 49, № 6. P. 763-766
Type: статьи в журналах
Date: 2015
Description: The electronic properties and the limiting position of the Fermi level in p-GaSb crystals irradiated with full-spectrum reactor neutrons at up to a fluence of 8.6 × 1018 cm−2 are studied. It is shown ... More
^