Authors: Sklyadneva, I. Yu. | Heid, Rolf | Bohnen, Klaus Peter | Echenique, Pedro Miguel | Chulkov, Evgueni V. | Rusinov, I. P.

Source: Scientific Reports [Еlectronic resource]. 2016. Vol. 6. P. 24137 (1-6)

Type: статьи в журналах

Date: 2016

Description: We report an ab initio study of the effect of hydrostatic pressure and uniaxial strain on electronic properties of KNa2Bi, a cubic bialkali bismuthide. It is found that this zero-gap semimetal with an ... More

Authors: Protogenov, Alexander P. | Chulkov, Evgueni V.

Source: Semiconductors. 2015. Vol. 49, № 12. P. 1550-1556

Type: статьи в журналах

Date: 2015

Description: The N-terminal scheme is considered for studying the contribution of edge states to the response of a two-dimensional topological insulator. A universal distribution of the nonlocal resistance between ... More