Электронная библиотека (репозиторий) Томского государственного университета
Voytsekhovskiy, Alexander V.

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Add   Two-dimensional materials of group IVA: Latest advances in epitaxial methods of growth
Authors: Lozovoy, Kirill A. | Dirko, Vladimir V. | Vinarskiy, Vladimir P | Kokhanenko, Andrey P. | Voytsekhovskiy, Alexander V. | Akimenko, Nataliya Yu.
Source: Russian physics journal. 2022. Vol. 64, № 9. P. 1583-1591
Type: статьи в журналах
Date: 2022
Description: Two-dimensional materials have become one of the central research topics of scientists around the world after the production of graphene - a monatomic layer of carbon. Currently, two-dimensional cryst ... More
Add   Comparative analysis of germanium-silicon quantum dots formation on Si(100), Si(111) and Sn/Si(100) surfaces
Authors: Lozovoy, Kirill A. | Kokhanenko, Andrey P. | Voytsekhovskiy, Alexander V.
Source: Nanotechnology. 2018. Vol. 29, № 5. P. 054002 (1-7)
Type: статьи в журналах
Date: 2018
Description: In this paper theoretical modeling of formation and growth of germanium–silicon quantum dots in the method of molecular beam epitaxy (MBE) on different surfaces is carried out. Silicon substrates with ... More
Add   Comparison of the growth processes of germanium quantum dots on the Si (100) and Si(111) surfaces
Authors: Kokhanenko, Andrey P. | Lozovoy, Kirill A. | Voytsekhovskiy, Alexander V.
Source: Russian physics journal. 2018. Vol. 60, № 11. P. 1871-1879
Type: статьи в журналах
Date: 2018
Description: A comparative analysis is carried out of the growth peculiarities under molecular-beam epitaxy of germanium quantum dots on the silicon surfaces with different crystallographic orientations Si(100) an ... More
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