Электронная библиотека (репозиторий) Томского государственного университета
статьи в журналах

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Add   Hysteresis phenomena in mis structures based on graded-gap MBE HgCdTe with a two-layer plasma-chemical insulator SiO2/Si3N4
Authors: Voytsekhovskiy, Alexander V. | Nesmelov, Sergey N. | Dzyadukh, Stanislav M.
Source: Russian physics journal. 2015. Vol. 58, № 4. P. 540-551
Type: статьи в журналах
Date: 2015
Description: Capacitance-voltage characteristics (CV characteristics) of MIS structures based on graded-gap MBE Hg1–xCdxTe (x = 0.22–0.23) with a two-layer plasma-chemical insulator SiO2/Si3N4 are studied under va ... More
Add   Relaxation of highly excited carriers in wide-gap semiconductors
Authors: Tyuterev, Valeriy G. | Zhukov, V. P. | Echenique, Pedro Miguel | Chulkov, Evgueni V.
Source: Journal of physics: Condensed matter. 2015. Vol. 27, № 2. P. 025801 (1-8)
Type: статьи в журналах
Date: 2015
Description: The electron energy relaxation in semiconductors and insulators after high-level external excitation is analysed by a semi-classical approach based on a kinetic equation of the Boltzmann type. We show ... More
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