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Source: Semiconductors. 2016. Vol. 50, № 2. P. 171-179
Type: статьи в журналах
Date: 2016
Description:
Halogen (F, Cl, Br, and I) adsorption at an As-stabilized GaAs (001) surface with the β2–(2 × 4) reconstruction is studied using the plane-wave projected-augmented wave method. The effect of halogens
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Source: IOP Conference Series: Materials Science and Engineering. 2015. Vol. 77. P. 012002 (1-4)
Type: статьи в журналах
Date: 2015
Description:
Theoretical study of the F, Cl, Br, I adsorption on GaAs(001) surface is presented. The most stable configurations of halogens on Ga-rich ζ-(4×2) reconstruction are determined with increasing of adato
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