Authors: Kokhanenko, Andrey P. | Lozovoy, Kirill A. | Voytsekhovskiy, Alexander V.

Source: Russian physics journal. 2018. Vol. 60, № 11. P. 1871-1879

Type: статьи в журналах

Date: 2018

Description: A comparative analysis is carried out of the growth peculiarities under molecular-beam epitaxy of germanium quantum dots on the silicon surfaces with different crystallographic orientations Si(100) an ... More

Authors: Talipov, Niyaz Kh. | Voytsekhovskiy, Alexander V.

Source: Russian physics journal. 2018. Vol. 61, № 6. P. 1005-1023

Type: статьи в журналах

Date: 2018

Description: The results of experimental studies of processes of the radiation defect formation under ion implantation of narrow-gap CdxHg1-xTe solid solutions (MCT) are presented. The processes of formation of st ... More