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Source: New journal of physics. 2018. Vol. 20, № 6. P. 063035 (1-8)
Type: статьи в журналах
Date: 2018
Description:
The layered polar semiconductor BiTeI exhibits large Rashba-type spin–orbit splittings in its bulk and surface electronic structure. Here we report an artificial structural modification near the surfa
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Source: Physical Review B. 2015. Vol. 91, № 24. P. 245145-1-245145-5
Type: статьи в журналах
Date: 2015
Description:
An exotic type of topological spin-helical surface state was found in layered van der Waals bonded (SnTe)n=2,3(Bi2Te3)m=1 compounds which comprise two covalently bonded band inverted sublattices, SnTe
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Source: Physical Review B. 2021. Vol. 103, № 2. P. 024303-1-024303-6
Type: статьи в журналах
Date: 2021
Description:
Electron-phonon coupling in ZrCo2Sn is investigated within the density-functional theory and linear-response approach in the mixed-basis pseudopotential representation. Phonon-induced scattering is an
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Source: Physical Review B. 2013. Vol. 87, № 8. P. 085440-1-085440-6
Type: статьи в журналах
Date: 2013
Source: Physical Review B. 2015. Vol. 91, № 8. P. 075307-1-075307-9
Type: статьи в журналах
Date: 2015
Description:
In the frame of k⋅p method and variational approach for the effective energy functional of a contact between a three-dimensional topological insulator (TI) and normal insulator (NI), we analytically d
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Source: Письма в журнал экспериментальной и теоретической физики. 2012. Т. 96, вып. 11/12. С. 799-803
Type: статьи в журналах
Date: 2012
Source: Physical Review B. 2014. Vol. 89. P. 165424-1-165424-7
Type: статьи в журналах
Date: 2014
Source: Nano letters. 2013. Vol. 13. P. 6064-6069
Type: статьи в журналах
Date: 2013
Description:
ABSTRACT: The ability to engineer an electronic band
Source: Journal of experimental and theoretical physics letters. 2013. Vol. 97, № 5. P. 258-264
Type: статьи в журналах
Date: 2013
Authors:
Ye, Mao |
Kuroda, Kenta |
Otrokov, Mikhail M. |
Ryabishchenkova, Anastasiya G. |
Jiang, Qi |
Ernst, Arthur |
Chulkov, Evgueni V. |
Nakatake, Masashi |
Arita, Masashi |
Okuda, Taichi |
Matsushita, Tomohiro |
Tóth, László |
Daimon, Hiroshi |
Shimada, Kenya |
Ueda, Yoshifumi |
Kimura, Akio
Source: The Journal of Physical Chemistry C. 2021. Vol. 125, № 3. P. 1784-1792
Type: статьи в журналах
Date: 2021
Description:
The electronic and atomic structures of topological insulator Bi2Se3, upon Ag atom deposition, have been investigated by combined experimental methods of scanning tunneling microscopy (STM), photoelec
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Source: Scientific Reports [Еlectronic resource]. 2016. Vol. 6. P. 20734 (1-7)
Type: статьи в журналах
Date: 2016
Description:
Strong topological insulators (TIs) support topological surfaces states on any crystal surface. In contrast, a weak, time-reversal-symmetry-driven TI with at least one non-zero v1, v2, v3 ℤ2 index sho
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Source: Applied surface science. 2013. Vol. 267. P. 169-172
Type: статьи в журналах
Date: 2013
Authors:
Niesner, D. |
Fauster, Th. |
Eremeev, Sergey V. |
Menshchikova, Tatiana V. |
Koroteev, Yury M. |
Protogenov, Alexander P. |
Chulkov, Evgueni V. |
Tereshchenko, Oleg E. |
Kokh, Konstantin A. |
Alekperov, O. |
Nadjafov, A. |
Mamedov, Nazim T.
Source: Physical Review B. 2012. Vol. 86, № 20. P. 205403-1-205403-6
Type: статьи в журналах
Date: 2012
Source: Progress in surface science. 2013. Vol. 88, № 2. P. 160-170
Type: статьи в журналах
Date: 2013
Source: Nanomaterials. 2023. Vol. 13, № 1. P. 141 (1-19)
Type: статьи в журналах
Date: 2023
Description:
In this work, we study, in the framework of the ab initio linear-response time-dependent density functional theory, the low-energy collective electronic excitations with characteristic sound-like disp
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