Authors: Izhnin, Igor I. | Dzyadukh, Stanislav M. | Voytsekhovskiy, Alexander V. | Gorn, Dmitriy Igorevich | Dvoretsky, Sergei A. | Mikhailov, Nikolaj N. | Nesmelov, Sergey N.

Source: Nanoscale research letters. 2016. Vol. 11. P. 53 (1-4)

Type: статьи в журналах

Date: 2016

Description: This work presents results of the investigation of admittance of metal-insulator-semiconductor structure based on Hg1 − xCdxTe grown by molecular beam epitaxy. The structure contains a single quantum ... More

Authors: Voytsekhovskiy, Alexander V. | Dzyadukh, Stanislav M. | Gorn, Dmitriy Igorevich | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Sidorov, Georgiy Yu. | Yakushev, Maxim V.

Source: Journal of communications technology and electronics. 2023. Vol. 68, № 3. P. 334-337

Type: статьи в журналах

Date: 2023

Description: The study is devoted to an experimental analysis of the electrical and photoelectric characteristics of barrier photosensitive structures in the NBνN configuration based on n-HgCdTe. Seven different t ... More

Authors: Voytsekhovskiy, Alexander V. | Dzyadukh, Stanislav M. | Gorn, Dmitriy Igorevich | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Sidorov, Georgiy Yu. | Yakushev, Maxim V.

Source: Physica scripta. 2023. Vol. 98, № 6. P. 065907

Type: статьи в журналах

Date: 2023

Description: This work is devoted to a comprehensive experimental study of the electrical and photoelectric characteristics of barrier photosensitive structures in the NBνN configuration based on n-HgCdTe (MCT). S ... More