Электронная библиотека (репозиторий) Томского государственного университета
Kokhanenko, Andrey P.

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Add   Dependence of Ge/Si avalanche photodiode performance on the thickness and doping concentration of the multiplication and absorption layers
Authors: Deeb, Hazem | Khomyakova, Kristina I. | Kokhanenko, Andrey P. | Douhan, Rahaf M. H. | Lozovoy, Kirill A.
Source: Inorganics. 2023. Vol. 11, № 7. P. 303 (1-15)
Type: статьи в журналах
Date: 2023
Description: In this article, the performance and design considerations of the planar structure of germanium on silicon avalanche photodiodes are presented. The dependences of the breakdown voltage, gain, andwidth ... More
Add   Admittance of organic LED structures with an emission YAK-203 layer
Authors: Nesmelov, Sergey N. | Dzyadukh, Stanislav M. | Kopylova, Tatyana N. | Degtyarenko, Konstantin M. | Kokhanenko, Andrey P. | Voytsekhovskiy, Alexander V.
Source: Russian physics journal. 2019. Vol. 62, № 2. P. 306-313
Type: статьи в журналах
Date: 2019
Description: The current-voltage characteristics and admittance of multilayer structures for organic LEDs based on the PEDOT:PSS/NPD/YAK-203/BCP system have been experimentally investigated in a wide range of the ... More
Add   Single‑photon avalanche diode detectors based on group IV materials
Authors: Izhnin, Igor I. | Lozovoy, Kirill A. | Kokhanenko, Andrey P. | Khomyakova, Kristina I. | Douhan, Rahaf M. H. | Dirko, Vladimir V. | Voytsekhovskiy, Alexander V. | Fitsych, Olena I. | Akimenko, Nataliya Yu.
Source: Applied nanoscience. 2022. Vol. 12, № 3. P. 253-263
Type: статьи в журналах
Date: 2022
Description: Today there are several types of photodetectors that can cope with the task of detecting a single photon, however, avalanche photodiodes are most widely used for applications in fiber-optic communicat ... More
Add   Comparison of the growth processes of germanium quantum dots on the Si (100) and Si(111) surfaces
Authors: Kokhanenko, Andrey P. | Lozovoy, Kirill A. | Voytsekhovskiy, Alexander V.
Source: Russian physics journal. 2018. Vol. 60, № 11. P. 1871-1879
Type: статьи в журналах
Date: 2018
Description: A comparative analysis is carried out of the growth peculiarities under molecular-beam epitaxy of germanium quantum dots on the silicon surfaces with different crystallographic orientations Si(100) an ... More
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