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Authors:
Fiedler, Sebastian |
El-Kareh, Lydia |
Eremeev, Sergey V. |
Tereshchenko, Oleg E. |
Seibel, Christoph |
Lutz, Peter |
Kokh, Konstantin A. |
Chulkov, Evgueni V. |
Kuznetsova, Tatyana V. |
Grebennikov, Vladimir I. |
Bentmann, Hendrik |
Bode, Matthias |
Reinert, Friedrich
Source: New journal of physics. 2014. Vol. 16. P. 075013 (1-16)
Type: статьи в журналах
Date: 2014
Authors:
Okuda, Taichi |
Schwier, E. F. |
Iwasawa, H. |
Shimada, Kenya |
Natamane, M. |
Taniguchi, Masaki |
Rusinov, Igor P. |
Eremeev, Sergey V. |
Kokh, Konstantin A. |
Annese, E. |
Golyashov, Vladimir A. |
Tereshchenko, Oleg E. |
Chulkov, Evgueni V. |
Kimura, Akio
Source: Physical Review B. 2018. Vol. 97, № 20. P. 205113-1-205113-6
Type: статьи в журналах
Date: 2018
Description:
We have grown the phase-homogeneous ternary compound with composition Bi2Te1.85S1.15 very close to the stoichiometric Bi2Te2S. The measurements performed with spin- and angle-resolved photoelectron sp
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Source: Scientific Reports [Еlectronic resource]. 2016. Vol. 6. P. 20734 (1-7)
Type: статьи в журналах
Date: 2016
Description:
Strong topological insulators (TIs) support topological surfaces states on any crystal surface. In contrast, a weak, time-reversal-symmetry-driven TI with at least one non-zero v1, v2, v3 ℤ2 index sho
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Authors:
Klimovskikh, Ilya I. |
Eremeev, Sergey V. |
Rybkina, A. A. |
Rusinova, M. V. |
Rybkin, Artem G. |
Zhizhin, E. V. |
Sánchez-Barriga, J. |
Varykhalov, A. |
Rusinov, I. P. |
Chulkov, Evgueni V. |
Kokh, Konstantin A. |
Golyashov, V. A. |
Kamyshlov, V. |
Tereshchenko, Oleg E. |
Shikin, A. M.
Source: Physical Review B. 2014. Vol. 89, № 12. P. 125416-1-125416-8
Type: статьи в журналах
Date: 2014
Authors:
Fedorov, Alexander V. |
Poelchen, Georg |
Eremeev, Sergey V. |
Schulz, Susanne |
Generalov, Alexander |
Polley, C. |
Laubschat, Clemens |
Kliemt, Kristin |
Kaya, M. |
Krellner, Cornelius |
Chulkov, Evgueni V. |
Kummer, Kurt |
Usachov, Dmitry Yu. |
Ernst, Arthur |
Vyalikh, Denis V.
Source: The journal of physical chemistry letters. 2021. Vol. 12, № 34. P. 8328-8334
Type: статьи в журналах
Date: 2021
Description:
Discovered in 1962, the divalent ferromagnetic semiconductor EuS (T-C = 16.5 K, E-g = 1.65 eV) has remained constantly relevant to the engineering of novel magnetically active interfaces, heterostruct
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