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Authors:
Izhnin, Igor I. |
Mynbaev, Karim D. |
Voytsekhovskiy, Alexander V. |
Korotaev, Alexander G. |
Varavin, Vasilii S. |
Dvoretsky, Sergei A. |
Mikhailov, Nikolay N. |
Yakushev, Maxim V. |
Fitsych, Olena I. |
Świątek, Zbigniew
Source: Infrared physics and technology. 2021. Vol. 114. P. 103665 (1-7)
Type: статьи в журналах
Date: 2021
Description:
Carrier species in arsenic-implanted p– and n–type Hg0.7Cd0.3Te films grown by molecular-beam epitaxy were investigated with the use of the Hall-effect studies and mobility spectrum analysis. The impl
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Authors:
Izhnin, Igor I. |
Mynbaev, Karim D. |
Voytsekhovskiy, Alexander V. |
Korotaev, Alexander G. |
Varavin, Vasilii S. |
Dvoretsky, Sergei A. |
Mikhailov, Nikolay N. |
Yakushev, Maxim V. |
Fitsych, Olena I. |
Świątek, Zbigniew |
Jakiela, Rafal
Source: Journal of electronic materials. 2021. Vol. 50, № 6. P. 3714-3721
Type: статьи в журналах
Date: 2021
Description:
Accumulation of arsenic implantation-induced donor defects in heteroepitaxial Hg1−xCdxTe structures with the composition of the active layer xa = 0.30 was studied with the use of the Hall-efect measur
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Authors:
Fitsych, Olena I. |
Voytsekhovskiy, Alexander V. |
Korotaev, Alexander G. |
Mynbaev, Karim D. |
Kurbanov, K. R. |
Varavin, Vasilii S. |
Dvoretsky, Sergei A. |
Mikhailov, Nikolay N. |
Remesnik, V. G. |
Izhnin, Igor I. |
Yakushev, Maxim V. |
Bonchyk, A. Yu. |
Savytskyy, Hrygory V. |
Świątek, Zbigniew |
Morgiel, Jerzy
Source: Russian physics journal. 2020. Vol. 63, № 2. P. 290-295
Type: статьи в журналах
Date: 2020
Description:
By profiling the electrical parameters of the arsenic implanted CdHgTe films, grown by molecular beam
Authors:
Fitsych, Olena I. |
Świątek, Zbigniew |
Morgiel, Y. |
Bonchyk, A. Yu. |
Savytskyy, Hrygory V. |
Mynbaev, Karim D. |
Voytsekhovskiy, Alexander V. |
Korotaev, Alexander G. |
Yakushev, Maxim V. |
Marin, Denis V. |
Varavin, Vasilii S. |
Dvoretsky, Sergei A. |
Izhnin, Igor I.
Source: Opto-electronics review. 2019. Vol. 27, № 1. P. 14-17
Type: статьи в журналах
Date: 2019
Description:
Effect of annealing on the structural properties of arsenic-implanted mercury cadmium telluride film grown by molecular beam epitaxy was studied with the use of transmission electron microscopy and op
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Authors:
Mynbaev, Karim D. |
Voytsekhovskiy, Alexander V. |
Korotaev, Alexander G. |
Syvorotka, I. I. |
Fitsych, Olena I. |
Varavin, Vasilii S. |
Dvoretsky, Sergei A. |
Mikhailov, Nikolay N. |
Remesnik, V. G. |
Yakushev, Maxim V. |
Świątek, Zbigniew |
Morgiel, Jerzy |
Bonchyk, A. Yu. |
Savytskyy, Hrygory V. |
Izhnin, Igor I.
Source: Infrared physics and technology. 2019. Vol. 98. P. 230-235
Type: статьи в журналах
Date: 2019
Description:
The Hall-effect/electrical conductivity measurements and mobility spectrum analysis (MSA) have been used for the study of the profiles of different electron species and corresponding defects induced i
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