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Source: Surface and coatings technology. 2020. Vol. 384. P. 125289 (1-5)
Type: статьи в журналах
Date: 2020
Description:
Nowadays, two-dimensional crystals (2D materials) and structures with quantum dots (0D materials) are considered
Source: Nanomaterials. 2022. Vol. 12, № 13. P. 2221 (1-21)
Type: статьи в журналах
Date: 2022
Description:
Today, two-dimensional materials are one of the key research topics for scientists around the world. Interest in 2D materials is not surprising because, thanks to their remarkable mechanical, thermal,
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Source: Известия высших учебных заведений. Физика. 2013. Т. 56, № 10/3. С. 206-208
Type: статьи в журналах
Date: 2013
Source: Physical chemistry chemical physics. 2015. Vol. 17, № 44. P. 30052-30056
Type: статьи в журналах
Date: 2015
Description:
Experimental results indicate a particular importance of such a value as the equilibrium thickness of the wetting layer during epitaxial growth according to the Stranski–Krastanow mechanism in systems
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Source: Crystal growth and design. 2015. Vol. 15, № 3. P. 1055-1059
Type: статьи в журналах
Date: 2015
Source: Physica status solidi A : applications and materials science. 2020. Vol. 217, № 6. P. 1900847 (1-6)
Type: статьи в журналах
Date: 2020
Description:
The organic light-emitting device (OLED) structures based on layer (2,8-bis[N,Ndi(
Source: Journal of Physics: Conference Series. 2016. Vol. 741. P. 012019 (1-4)
Type: статьи в журналах
Date: 2016
Description:
In this paper refining of mathematical model for calculation of parameters of selforganised quantum dots (QDs) of Ge on Si grown by the method of molecular beam epitaxy (MBE) is done. Calculations of
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Source: Nuclear instruments and methods in physics research B. 2012. Vol. 272. P. 313-317
Type: статьи в журналах
Date: 2012
Source: Известия высших учебных заведений. Физика. 2012. Т. 55, № 8/3. С. 223-224
Type: статьи в журналах
Date: 2012
Source: Surface science. 2014. Vol. 619. P. 1-4
Type: статьи в журналах
Date: 2013
Source: Russian physics journal. 2015. Vol. 57, № 11. P. 1584-1592
Type: статьи в журналах
Date: 2015
Source: Advanced Materials Research. 2014. Vol. 1040. P. 34-38
Type: статьи в журналах
Date: 2014
Authors:
Lyapunov, D. V. |
Grigoryev, Denis V. |
Korotaev, A. G. |
Voytsekhovskiy, Alexander V. |
Kokhanenko, Andrey P. |
Iznin, I. I. |
Savytskyy, Hrygory V. |
Bonchik, A. U. |
Dvoretsky, Sergei A. |
Pishchagin, Anton A. |
Mikhailov, Nikolay N.
Source: Journal of Physics: Conference Series. 2016. Vol. 741. P. 012097 (1-5)
Type: статьи в журналах
Date: 2016
Description:
In this work the experimental results of investigations of the dynamics of accumulation and spatial distribution of electrically active radiation defects when irradiating epitaxial films of Hg1-xCdxTe
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Source: Semiconductor science and technology. 2020. Vol. 35, № 5. P. 055026 (1-7)
Type: статьи в журналах
Date: 2020
Description:
Metal-insulator-semiconductor (MIS) structures were fabricated by depositing an Al2O3 dielectric on
Authors:
Grigoryev, Denis V. |
Voytsekhovskiy, Alexander V. |
Lozovoy, Kirill A. |
Tarasenko, Viktor Fedotovich |
Ripenko, V. S. |
Shulepov, Mikhail A. |
Erofeev, Mikhail V. |
Yakushev, Maxim V. |
Dvoretsky, Sergei A. |
Korotaev, Alexander G. |
Mikhailov, Nikolay N. |
Varavin, Vasilii S.
Source: Surface and coatings technology. 2020. Vol. 387. P. 125527 (1-5)
Type: статьи в журналах
Date: 2020
Description:
In this work the results of the experimental investigation of the influence of the high-frequency nanosecond