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Authors:
Kang, Z.-H. |
Li, X.-M. |
Wang, Zeng-Bin |
Gao, J.-Y. |
Andreev, Yury M. |
Atuchin, Victor V. |
Kokh, Konstantin A. |
Lanskii, Grigory V. |
Potekaev, Aleksandr I. |
Shaiduko, Anna V. |
Svetlichnyi, Valerii A. |
Feng, Z.-S.
Source: AIP Advances. 2014. Vol. 4, Issue 3. P. 037104-1-037104-6
Type: статьи в журналах
Date: 2014
Source: Proceedings of SPIE. 2015. Vol. 9810 : XII International Conference on Atomic and Molecular Pulsed Lasers, 13–18 September 2015, Tomsk, Russian Federation. P. 98101P-1-98101P-7
Type: статьи в журналах
Date: 2015
Description:
Design of top S-doped GaSe growth technology is completed. New methods for characterization of high optical quality crystals are proposed that allowed selection optimally doped crystals. Frequency con
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Source: Bulletin of the Russian Academy of Sciences: Physics. 2015. Vol. 79, № 2. P. 238-241
Type: статьи в журналах
Date: 2015
Description:
GaSe crystals with 0, 0.07, 0.38, 0.67, 2.07, 3, and 5 wt % Te are grown. GaSe:Te (≤2.07 wt %) crystals are suitable for nonlinear optics applications. The optimum doping level is 0.07 wt %. This mini
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