Электронная библиотека (репозиторий) Томского государственного университета
Voytsekhovskiy, Alexander V.

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Add   Investigation of the differential resistance of MIS structures based on n-Hg0.78Cd0.22Te with near-surface graded-gap layers
Authors: Voytsekhovskiy, Alexander V. | Kulchitskii, N. A. | Nesmelov, Sergey N. | Dzyadukh, Stanislav M. | Varavin, Vasilii S. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Yakushev, Maxim V. | Sidorov, Georgiy Yu.
Source: Journal of communications technology and electronics. 2021. Vol. 66, № 3. P. 337-339
Type: статьи в журналах
Date: 2021
Description: The admittance of MIS structures based on n(p)-Hg1–xCdxTe (x = 0.21–0.23) grown by molecular-beam epitaxy on Si and GaAs substrates is studied. The possibility of increasing the value of the product o ... More
Add   Admittance of MIS structures based on MBE Hg1 –xCdxTe (x = 0.21–0.23) in a wide temperature range
Authors: Kulchitsky, N. A. | Nesmelov, Sergey N. | Dzyadukh, Stanislav M. | Voytsekhovskiy, Alexander V.
Source: Journal of communications technology and electronics. 2018. Vol. 63, № 9. P. 1112-1118
Type: статьи в журналах
Date: 2018
Description: Features of the electrical properties of n(p)-Hg1–xCdxTe (x = 0.21–0.23) with Al2O3 or SiO2/Si3N4 dielectrics are considered. The HgCdTe films were grown by means of molecular beam epitaxy on GaAs(013 ... More
Add   Electrophysical characteristics of the pentacene-based MIS structures with a SiO2 insulator
Authors: Voytsekhovskiy, Alexander V. | Nesmelov, Sergey N. | Dzyadukh, Stanislav M. | Kopylova, Tatyana N. | Degtyarenko, Konstantin M. | Chernikov, E. V. | Kalygina, V. M. | Novikov, Vadim A.
Source: Russian physics journal. 2019. Vol. 62, № 1. P. 90-99
Type: статьи в журналах
Date: 2019
Description: In a wide range of frequencies and temperatures, the admittance of MIS structures based on pentacene organic films, formed by thermal evaporation in vacuum on SiO2 and SiO2/Ga2O3 substrates, was exper ... More
Add   Admittance of MIS-structures based on HgCdTe with a double-layer CdTe/Al2O3 insulator
Authors: Voytsekhovskiy, Alexander V. | Nesmelov, Sergey N. | Sidorov, Georgiy Yu. | Varavin, Vasilii S. | Vasilev, Vladimir V. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Yakushev, Maxim V. | Dzyadukh, Stanislav M.
Source: Russian physics journal. 2018. Vol. 60, № 11. P. 1853-1863
Type: статьи в журналах
Date: 2018
Description: Admittance of MIS structures based on n(p)- Hg1–xCdxTe (at x from 0.22 to 0.40) with SiO2/Si3N4, Al2O3, and CdTe/Al2O3 insulators is studied experimentally at 77 K. Growth of an intermediate CdTe laye ... More
Add   Electrical properties of nBn structures based on HgCdTe grown by molecular beam epitaxy on GaAs substrates
Authors: Nesmelov, Sergey N. | Dzyadukh, Stanislav M. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Sidorov, Georgiy Yu. | Yakushev, Maxim V. | Voytsekhovskiy, Alexander V.
Source: Infrared physics and technology. 2019. Vol. 102. P. 103035 (1-4)
Type: статьи в журналах
Date: 2019
Description: The unipolar MWIR nBn structures based on HgCdTe grown by molecular beam epitaxy on GaAs (0 1 3) substrates were created. The CdTe content in the barrier layer varied from 0.67 to 0.84 for various sam ... More
Add   Admittance characterization of pentacene metal-insulator-semiconductor capacitors with SiO2 and SiO2/Ga2O3 insulators in temperature range of 9-300 K
Authors: Nesmelov, Sergey N. | Novikov, Vadim A. | Dzyadukh, Stanislav M. | Kopylova, Tatyana N. | Ivonin, Ivan V. | Degtyarenko, Konstantin M. | Tereshchenko, Evgeny V. | Voytsekhovskiy, Alexander V.
Source: Thin solid films. 2019. Vol. 692. P. 137622 (1-7)
Type: статьи в журналах
Date: 2019
Description: Pentacene-based metal-insulator-semiconductor capacitors with SiO2 and SiO2/Ga2O3 insulators were investigated in the temperature range of 9–300 K. The capacitance-voltage curves of the fabricated cap ... More
Add   Admittance dependences of the mid-wave infrared barrier structure based on HgCdTe grown by molecular beam epitaxy
Authors: Nesmelov, Sergey N. | Dzyadukh, Stanislav M. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Sidorov, Georgiy Yu. | Yakushev, Maxim V. | Voytsekhovskiy, Alexander V.
Source: Materials research express. 2019. Vol. 6, № 11. P. 116411 (1-7)
Type: статьи в журналах
Date: 2019
Description: The admittance of nBn structures based on HgCdTe grown by molecular beam epitaxy (MBE) on GaAs (013) substrates was studied. The measurements were performed in the temperature range of 10–310 K at the ... More
Add   The effect of As+ Ion implantation and annealing on the electrical properties of near-surface layers in graded-gap n-Hg0.78Cd0.22Te films
Authors: Voytsekhovskiy, Alexander V. | Nesmelov, Sergey N. | Dzyadukh, Stanislav M. | Varavin, Vasilii S. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Sidorov, Georgiy Yu. | Yakushev, Maxim V. | Marin, Denis V.
Source: Technical physics letters. 2021. Vol. 47, № 2. P. 189-192
Type: статьи в журналах
Date: 2021
Add   Peculiarities of the 7 × 7 to 5 × 5 superstructure transition during epitaxial growth of germanium on silicon (111) surface
Authors: Dirko, Vladimir V. | Lozovoy, Kirill A. | Kokhanenko, Andrey P. | Kukenov, Olzhas I. | Korotaev, Alexander G. | Voytsekhovskiy, Alexander V.
Source: Nanomaterials. 2023. Vol. 13, № 2. P. 231 (1-12)
Type: статьи в журналах
Date: 2023
Description: This paper presents the results of studying the processes of epitaxial growth of germanium on silicon with crystallographic orientation (111) in a wide temperature range. The temperature dependences o ... More
Add   Development of a high-voltage waveguide photodetector comprised of Schottky diodes and based on the Ge–Si structure with Ge quantum dots for portable thermophotovoltaic converters
Authors: Pakhanov, N. A. | Yakimov, A. I. | Voytsekhovskiy, Alexander V. | Pchelyakov, Oleg P.
Source: Optoelectronics, instrumentation and data processing. 2017. Vol. 53, № 2. P. 190-196
Type: статьи в журналах
Date: 2017
Description: This paper demontstrates the possibility of developing a high-voltage waveguide photodetector comprised of Schottky diodes and based on a Au/Ge — Si structure with Ge quantum dots pseudomorphic to a s ... More
Add   Admittance of MIS structures based on nBn systems of epitaxial HgCdTe for detection in the 3–5 μm spectral range
Authors: Voytsekhovskiy, Alexander V. | Nesmelov, Sergey N. | Dzyadukh, Stanislav M. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Sidorov, Georgiy Yu. | Yakushev, Maxim V.
Source: Technical physics letters. 2021. Vol. 47, № 9. P. 629-632
Type: статьи в журналах
Date: 2021
Description: The admittance of test MIS structures based on nBn systems from Hg1 – xCdxTe grown by molecular beam epitaxy is investigated. Composition x in the absorbing and contact layers is 0.29; in the barrier ... More
Add   Admittance of pentacene-based MIS-structures with two-layer insulator SiO2-Al2O3
Authors: Voytsekhovskiy, Alexander V. | Nesmelov, Sergey N. | Dzyadukh, Stanislav M. | Kopylova, Tatyana N. | Degtyarenko, Konstantin M.
Source: Russian physics journal. 2021. Vol. 64, № 7. P. 1281-1288
Type: статьи в журналах
Date: 2021
Description: Experimental studies of the admittance of MIS structures based on pentacene with a two-layer insulator SiO2–Al2O3 and back contacts made of various materials (Au, Al, In, and Ag) have been carried out ... More
Add   Effect of pulse nanosecond volume discharge in air at atmospheric pressure on electrical properties of MIS structures based on p-HgCdTe grown by molecular beam epitaxy
Authors: Voytsekhovskiy, Alexander V. | Dzyadukh, Stanislav M. | Grigoryev, Denis V. | Tarasenko, Viktor Fedotovich | Shulepov, Mikhail A. | Nesmelov, Sergey N.
Source: Russian physics journal. 2015. Vol. 58, № 7. P. 970-977
Type: статьи в журналах
Date: 2015
Description: The effect of the pulse nanosecond volume discharge in air at atmospheric pressure on the admittance of MIS structures based on MBE graded-gap p-Hg0.78Cd0.22Te is studied in a wide range of frequencie ... More
Add   Dark currents of unipolar barrier structures based on mercury cadmium telluride for long-wave IR detectors
Authors: Voytsekhovskiy, Alexander V. | Nesmelov, Sergey N. | Dzyadukh, Stanislav M. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Sidorov, Georgiy Yu. | Yakushev, Maxim V.
Source: Russian physics journal. 2021. Vol. 64, № 5. P. 763-769
Type: статьи в журналах
Date: 2021
Description: Two types of long-wave infrared nBn-structures based on mercury cadmium telluride grown by molecular beam epitaxy on GaAs (013) substrates have been fabricated. For each type of device, the side walls ... More
Add   Admittance of organic LED structures with an emission YAK-203 layer
Authors: Nesmelov, Sergey N. | Dzyadukh, Stanislav M. | Kopylova, Tatyana N. | Degtyarenko, Konstantin M. | Kokhanenko, Andrey P. | Voytsekhovskiy, Alexander V.
Source: Russian physics journal. 2019. Vol. 62, № 2. P. 306-313
Type: статьи в журналах
Date: 2019
Description: The current-voltage characteristics and admittance of multilayer structures for organic LEDs based on the PEDOT:PSS/NPD/YAK-203/BCP system have been experimentally investigated in a wide range of the ... More

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