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Authors:
Gruznev, Dimitry V. |
Yakovlev, Alexey A. |
Tupchaya, Alexandra Y. |
Usachov, Dmitry Yu. |
Vilkov, Oleg Yu |
Fedorov, Alexander V. |
Vyalikh, Denis V. |
Eremeev, Sergey V. |
Chulkov, Evgueni V. |
Zotov, Andrey V. |
Saranin, Alexander A. |
Bondarenko, Leonid V.
Source: Scientific Reports [Еlectronic resource]. 2013. Vol. 3. P. 01826 (1-6)
Type: статьи в журналах
Date: 2013
Authors:
Güttler, M. |
Otrokov, Mikhail M. |
Kummer, K. |
Kliemt, K. |
Fedorov, Alexander V. |
Chikina, Alla |
Danzenbächer, S. |
Schulz, S. |
Chulkov, Evgueni V. |
Generalov, A. |
Koroteev, Yury M. |
Caroca-Canales, N. |
Shi, M. |
Radovic, M. |
Geibel, C. |
Laubschat, Clemens |
Krellner, C. |
Vyalikh, Denis V. |
Dudin, P. |
Kim, T. K. |
Hoesch, M.
Source: Scientific Reports [Еlectronic resource]. 2016. Vol. 6. P. 24254 (1-11)
Type: статьи в журналах
Date: 2016
Description:
Spin-polarized two-dimensional electron states (2DESs) at surfaces and interfaces of magnetically active materials attract immense interest because of the idea of exploiting fermion spins rather than
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Authors:
Fedorov, Alexander V. |
Poelchen, Georg |
Eremeev, Sergey V. |
Schulz, Susanne |
Generalov, Alexander |
Polley, C. |
Laubschat, Clemens |
Kliemt, Kristin |
Kaya, M. |
Krellner, Cornelius |
Chulkov, Evgueni V. |
Kummer, Kurt |
Usachov, Dmitry Yu. |
Ernst, Arthur |
Vyalikh, Denis V.
Source: The journal of physical chemistry letters. 2021. Vol. 12, № 34. P. 8328-8334
Type: статьи в журналах
Date: 2021
Description:
Discovered in 1962, the divalent ferromagnetic semiconductor EuS (T-C = 16.5 K, E-g = 1.65 eV) has remained constantly relevant to the engineering of novel magnetically active interfaces, heterostruct
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Authors:
Usachov, Dmitry Yu. |
Petukhov, Anatoly E. |
Vilkov, Oleg Yu. |
Rybkin, Artem G. |
Otrokov, Mikhail M. |
Arnau, Andrés |
Chulkov, Evgueni V. |
Yashina, Lada V. |
Farjam, Mani |
Fedorov, Alexander V. |
Adamchuk, Vera K. |
Senkovskiy, Boris V. |
Laubschat, Clemens |
Vyalikh, Denis V.
Source: ACS Nano. 2015. Vol. 9. P. 7314-7322
Type: статьи в журналах
Date: 2015
Description:
Embedding foreign atoms or molecules in graphene has become the key approach in its functionalization and is intensively used for tuning its structural and electronic properties. Here, we present an e
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Authors:
Usachov, Dmitry Yu. |
Gruneis, Alexander |
Laubschat, Clemens |
Vyalikh, Denis V. |
Otrokov, Mikhail M. |
Chikina, Alla |
Vilkov, Oleg Yu. |
Petukhov, Anatoly E. |
Rybkin, Artem G. |
Koroteev, Yury M. |
Chulkov, Evgueni V. |
Adamchuk, Vera K. |
Fedorov, Alexander V.
Source: Nano letters. 2015. Vol. 15, № 4. P. 2396-2401
Type: статьи в журналах
Date: 2015
Description:
With the discovery and first characterization of graphene, its potential for spintronic applications was recognized immediately. Since then, an active field of research has developed trying to overcom
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Authors:
Usachov, Dmitry Yu. |
Vilkov, Oleg Yu. |
Petukhov, Anatoly E. |
Rybkin, Artem G. |
Ernst, Arthur |
Otrokov, Mikhail M. |
Chulkov, Evgueni V. |
Ogorodnikov, Ilya I. |
Kuznetsov, Mikhail V. |
Fedorov, Alexander V. |
Yashina, Lada V. |
Kataev, Elmar Yu. |
Erofeevskaya, Anna V. |
Voroshin, Vladimir Yu. |
Adamchuk, Vera K. |
Laubschat, Clemens |
Vyalikh, Denis V.
Source: Nano letters. 2016. Vol. 16, № 7. P. 4535-4543
Type: статьи в журналах
Date: 2016
Description:
The implementation of future graphene-based electronics is essentially restricted by the absence of a band gap in the electronic structure of graphene. Options of how to create a band gap in a reprodu
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