Электронная библиотека (репозиторий) Томского государственного университета
Chulkov, Evgueni V. | Laubschat, Clemens | Fedorov, Alexander V.

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Add   Robust and tunable itinerant ferromagnetism at the silicon surface of the antiferromagnet GdRh2Si2
Authors: Güttler, M. | Otrokov, Mikhail M. | Kummer, K. | Kliemt, K. | Fedorov, Alexander V. | Chikina, Alla | Danzenbächer, S. | Schulz, S. | Chulkov, Evgueni V. | Generalov, A. | Koroteev, Yury M. | Caroca-Canales, N. | Shi, M. | Radovic, M. | Geibel, C. | Laubschat, Clemens | Krellner, C. | Vyalikh, Denis V. | Dudin, P. | Kim, T. K. | Hoesch, M.
Source: Scientific Reports [Еlectronic resource]. 2016. Vol. 6. P. 24254 (1-11)
Type: статьи в журналах
Date: 2016
Description: Spin-polarized two-dimensional electron states (2DESs) at surfaces and interfaces of magnetically active materials attract immense interest because of the idea of exploiting fermion spins rather than ... More
Add   Insight into the temperature evolution of electronic structure and mechanism of exchange interaction in EuS
Authors: Fedorov, Alexander V. | Poelchen, Georg | Eremeev, Sergey V. | Schulz, Susanne | Generalov, Alexander | Polley, C. | Laubschat, Clemens | Kliemt, Kristin | Kaya, M. | Krellner, Cornelius | Chulkov, Evgueni V. | Kummer, Kurt | Usachov, Dmitry Yu. | Ernst, Arthur | Vyalikh, Denis V.
Source: The journal of physical chemistry letters. 2021. Vol. 12, № 34. P. 8328-8334
Type: статьи в журналах
Date: 2021
Description: Discovered in 1962, the divalent ferromagnetic semiconductor EuS (T-C = 16.5 K, E-g = 1.65 eV) has remained constantly relevant to the engineering of novel magnetically active interfaces, heterostruct ... More
Add   Epitaxial B-Graphene: large-scale growth and atomic structure
Authors: Usachov, Dmitry Yu. | Petukhov, Anatoly E. | Vilkov, Oleg Yu. | Rybkin, Artem G. | Otrokov, Mikhail M. | Arnau, Andrés | Chulkov, Evgueni V. | Yashina, Lada V. | Farjam, Mani | Fedorov, Alexander V. | Adamchuk, Vera K. | Senkovskiy, Boris V. | Laubschat, Clemens | Vyalikh, Denis V.
Source: ACS Nano. 2015. Vol. 9. P. 7314-7322
Type: статьи в журналах
Date: 2015
Description: Embedding foreign atoms or molecules in graphene has become the key approach in its functionalization and is intensively used for tuning its structural and electronic properties. Here, we present an e ... More
Add   Observation of single-spin Dirac fermions at the graphene/ferromagnet interface
Authors: Usachov, Dmitry Yu. | Gruneis, Alexander | Laubschat, Clemens | Vyalikh, Denis V. | Otrokov, Mikhail M. | Chikina, Alla | Vilkov, Oleg Yu. | Petukhov, Anatoly E. | Rybkin, Artem G. | Koroteev, Yury M. | Chulkov, Evgueni V. | Adamchuk, Vera K. | Fedorov, Alexander V.
Source: Nano letters. 2015. Vol. 15, № 4. P. 2396-2401
Type: статьи в журналах
Date: 2015
Description: With the discovery and first characterization of graphene, its potential for spintronic applications was recognized immediately. Since then, an active field of research has developed trying to overcom ... More
Add   Large-scale sublattice asymmetry in pure and boron-doped graphene
Authors: Usachov, Dmitry Yu. | Vilkov, Oleg Yu. | Petukhov, Anatoly E. | Rybkin, Artem G. | Ernst, Arthur | Otrokov, Mikhail M. | Chulkov, Evgueni V. | Ogorodnikov, Ilya I. | Kuznetsov, Mikhail V. | Fedorov, Alexander V. | Yashina, Lada V. | Kataev, Elmar Yu. | Erofeevskaya, Anna V. | Voroshin, Vladimir Yu. | Adamchuk, Vera K. | Laubschat, Clemens | Vyalikh, Denis V.
Source: Nano letters. 2016. Vol. 16, № 7. P. 4535-4543
Type: статьи в журналах
Date: 2016
Description: The implementation of future graphene-based electronics is essentially restricted by the absence of a band gap in the electronic structure of graphene. Options of how to create a band gap in a reprodu ... More
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