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Source: Journal of instrumentation : electronic journal. 2015. Vol. 10, № 1. P. C01020 (1-5)
Type: статьи в журналах
Date: 2015
Description:
The investigation of the pulse height distribution and X-ray sensitivity depending on the contact material on high resistive chromium compensated gallium arsenide (HR GaAs:Cr) sensors is presented. So
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Source: Russian physics journal. 2015. Vol. 58, № 2. P. 192-197
Type: статьи в журналах
Date: 2015
Description:
The results of experiments on the generation of terahertz radiation in the nitride LED structures at optical excitation by ultrashort laser pulses are presented. The dependences of the emission spectr
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Source: Physica status solidi A. 2015. Vol. 212, № 5. P. 930-934
Type: статьи в журналах
Date: 2015
Description:
The results of experimental investigation of forward current-voltage characteristics of InGaN/GaN multiple quantum well light-emitting diodes are presented. A new model for explaining the complex curr
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Authors:
Hamann, E. |
Zuber, M. |
Cecilia, A. |
Tyazhev, Anton V. |
Tolbanov, Oleg P. |
Procz, S. |
Fauler, A. |
Baumbach, T. |
Fiederle, M. |
Koenig, T.
Source: IEEE transactions on medical imaging. 2015. Vol. 34, № 3. P. 707-715
Type: статьи в журналах
Date: 2015
Description:
High resistivity gallium arsenide is considered a suitable sensor material for spectroscopic X-ray imaging detectors. These sensors typically have thicknesses between a few hundred μm and 1 mm to ensu
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Source: Physica status solidi B. 2015. Vol. 252, № 5. P. 946-951
Type: статьи в журналах
Date: 2015
Description:
In this paper the results of experiments on terahertz generation from nitride light-emitting diode heterostructures under twophoton excitation by femtosecond laser pulses are reported. Dependencies of
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