Электронная библиотека (репозиторий) Томского государственного университета
Mikhailov, Nikolay N.

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Add   Urbach tail and nonuniformity probe of HgCdTe thin films and quantum well heterostructures grown by molecular beam epitaxy
Authors: Rumyantsev, Vladimir V. | Razova, Anna A. | Fadeev, Mikhail A. | Utochkin, Vladimir V. | Mikhailov, Nikolay N. | Dvoretsky, Sergei A. | Gavrilenko, Vladimir I. | Morozov, Sergey V.
Source: Optical engineering. 2021. Vol. 60, № 8. 082007-1-082007-9
Type: статьи в журналах
Date: 2021
Description: Temperature-driven photoconductivity spectra are studied in HgCdTe thin films and quantum well (QW) heterostructures grown by molecular beam epitaxy (MBE). It is shown that the absorption edge steepne ... More
Add   Diffusion limitation of dark current in the nBn structures based on the MBE HgCdTe
Authors: Voytsekhovskiy, Alexander V. | Nesmelov, Sergey N. | Dzyadukh, Stanislav M. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Sidorov, Georgiy Yu. | Yakushev, Maxim V.
Source: Journal of communications technology and electronics. 2022. Vol. 67, № 3. P. 308-312
Type: статьи в журналах
Date: 2022
Description: Dark currents in medium-wave nBn structures based on HgCdTe grown with the aid of molecular beam epitaxy on the (013) GaAs substrates are studied. The passivation of the surface of the side walls of t ... More
Add   Electrical characterization of insulator-semiconductor systems based on graded band gap MBE HgCdTe with atomic layer deposited Al2O3 films for infrared detector passivation
Authors: Nesmelov, Sergey N. | Dzyadukh, Stanislav M. | Varavin, Vasilii S. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Yakushev, Maxim V. | Sidorov, Georgiy Yu. | Voytsekhovskiy, Alexander V.
Source: Vacuum. 2018. Vol. 158. P. 136-140
Type: статьи в журналах
Date: 2018
Description: The electrical properties of MIS structures based on graded band gap Hg0.77Cd0.23Te grown by the molecular beam epitaxy method with the Al2O3 dielectric formed by the plasma enhanced atomic layer depo ... More
Add   Electrical properties of nBn structures based on HgCdTe grown by molecular beam epitaxy on GaAs substrates
Authors: Nesmelov, Sergey N. | Dzyadukh, Stanislav M. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Sidorov, Georgiy Yu. | Yakushev, Maxim V. | Voytsekhovskiy, Alexander V.
Source: Infrared physics and technology. 2019. Vol. 102. P. 103035 (1-4)
Type: статьи в журналах
Date: 2019
Description: The unipolar MWIR nBn structures based on HgCdTe grown by molecular beam epitaxy on GaAs (0 1 3) substrates were created. The CdTe content in the barrier layer varied from 0.67 to 0.84 for various sam ... More
Add   Admittance of metal-insulator-semiconductor structures based on graded-gap HgCdTe grown by molecular-beam epitaxy on GaAs substrates
Authors: Voytsekhovskiy, Alexander V. | Dzyadukh, Stanislav M. | Vasilev, Vladimir V. | Varavin, Vasilii S. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Yakushev, Maxim V. | Nesmelov, Sergey N.
Source: Infrared physics and technology. 2015. Vol. 71. P. 236-241
Type: статьи в журналах
Date: 2015
Description: Metal–insulator–semiconductor structures based on n-Hg1−xCdxTe (x = 0.19–0.25) were grown by molecular-beam epitaxy on the GaAs (0 1 3) substrates. Near-surface graded-gap layers with high CdTe conten ... More
Add   Admittance of MIS structures based on nBn systems of epitaxial HgCdTe for detection in the 3–5 μm spectral range
Authors: Voytsekhovskiy, Alexander V. | Nesmelov, Sergey N. | Dzyadukh, Stanislav M. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Sidorov, Georgiy Yu. | Yakushev, Maxim V.
Source: Technical physics letters. 2021. Vol. 47, № 9. P. 629-632
Type: статьи в журналах
Date: 2021
Description: The admittance of test MIS structures based on nBn systems from Hg1 – xCdxTe grown by molecular beam epitaxy is investigated. Composition x in the absorbing and contact layers is 0.29; in the barrier ... More
Add   Radiative recombination in narrow gap HgTe/CdHgTe quantum well heterostructures for laser applications
Authors: Dubinov, A. A. | Rumyantsev, V. V. | Fadeev, M. A. | Domnina, O. L. | Mikhailov, Nikolay N. | Dvoretsky, Sergei A. | Teppe, F. | Gavrilenko, V. I. | Morozov, S. V. | Aleshkin, V. Ya.
Source: Journal of physics: Condensed matter. 2018. Vol. 30, № 49. P. 495301 (1-6)
Type: статьи в журналах
Date: 2018
Description: Radiative recombination is studied in CdHgTe/HgTe QWs with bandgap in the 40-140 meV range using four-band Kane model. Calculated radiative lifetimes agree well with the photoconductivity kinetics mea ... More
Add   Admittance of barrier nanostructures based on MBE HgCdTe
Authors: Izhnin, Igor I. | Voytsekhovskiy, Alexander V. | Nesmelov, Sergey N. | Dzyadukh, Stanislav M. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Sidorov, Georgiy Yu. | Yakushev, Maxim V.
Source: Applied nanoscience. 2022. Vol. 12, № 3. P. 403-409
Type: статьи в журналах
Date: 2022
Description: Mid- and long-wave infrared nBn structures based on HgCdTe grown by molecular beam epitaxy (MBE) on GaAs (013) substrates were fabricated. For mid-wave nBn structures, the composition in the absorbing ... More
Add   Capacitive properties of metal-insulator-semiconductor systems based on an HgCdTe nBn structure grown by molecular beam epitaxy
Authors: Nesmelov, Sergey N. | Dzyadukh, Stanislav M. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Sidorov, Georgiy Yu. | Yakushev, Maxim V. | Voytsekhovskiy, Alexander V.
Source: Journal of communications technology and electronics. 2019. Vol. 64, № 3. P. 289-293
Type: статьи в журналах
Date: 2019
Description: The capacitance–voltage (CV) curves of metal–insulator–semiconductor (MIS) systems based on an HgCdTe nBn structure grown by molecular-beam epitaxy on GaAs(013) substrates were studied for the first t ... More
Add   Admittance dependences of the mid-wave infrared barrier structure based on HgCdTe grown by molecular beam epitaxy
Authors: Nesmelov, Sergey N. | Dzyadukh, Stanislav M. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Sidorov, Georgiy Yu. | Yakushev, Maxim V. | Voytsekhovskiy, Alexander V.
Source: Materials research express. 2019. Vol. 6, № 11. P. 116411 (1-7)
Type: статьи в журналах
Date: 2019
Description: The admittance of nBn structures based on HgCdTe grown by molecular beam epitaxy (MBE) on GaAs (013) substrates was studied. The measurements were performed in the temperature range of 10–310 K at the ... More
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