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Description | Size | Format | ||
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Photoelectrical characteristics of metal-insulator-semiconductor structures based on graded-gap HgCdTe grown by molecular-beam epitaxy | 797 KB | Adobe Acrobat PDF | View Details | Download |
DOI Доступ к ресурсу на сайте издателя | 10.1016/j.tsf.2013.11.014 |