Электронная библиотека (репозиторий) Томского государственного университета

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Authors: Ivanov, Maxim
Source: Международная конференция по геометрическому анализу в честь 90-летия академика Ю. Г. Решетняка, 22-28 сентября 2019 : тезисы докладов. Новосибирск, 2019. С. 68
Type: статьи в сборниках
Date: 2019
Source: Mechanics of advanced materials and structures. 2022. Vol. 29, № 28. P. 7364-7374
Type: статьи в журналах
Date: 2022
Description: The article presents a microstructure-based mechanical model of hexagonal close-packed (hcp) a-titanium representative of the mesoscale and analyzes the contribution of a pyramidal slip to plastic def ... More
Source: Applied nanoscience. 2022. Vol. 12, № 3. P. 395-401
Type: статьи в журналах
Date: 2022
Description: Bright–feld and high-resolution transmission electron microscopy were used for nano-scale structural studies of defects induced by implantation of arsenic ions with 190 keV energy and 1014 cm–2 fuence ... More
Source: Russian journal of inorganic chemistry. 2021. Vol. 66, № 8. P. 1252-1256
Type: статьи в журналах
Date: 2021
Description: AlMgB14-based materials have been synthesized by spark plasma sintering of an Al12Mg17–B powder mixture at 1300 and 1400°C. The phase composition, structure, and properties of these materials have bee ... More
Source: Materials research express. 2019. Vol. 6, № 7. P. 075912 (1-8)
Type: статьи в журналах
Date: 2019
Description: In this paper experimental results of research of boron ion implantation into Hg1−x Cd x Te epitaxial films of various compositions x are presented. Samples of epitaxial films were grown by the method ... More
Source: Систематические заметки по материалам Гербария им. П. Н. Крылова Томского государственного университета. 2020. № 121. С. 37-41
Type: статьи в журналах
Date: 2020
Description: The article provides information about the new finding for Bulgaria (Vitosha Mountain Range) of an East Asian species Rubus phoenicolasius Maxim., invasive for Europe and North America.
Source: Journal of communications technology and electronics. 2021. Vol. 66, № 3. P. 337-339
Type: статьи в журналах
Date: 2021
Description: The admittance of MIS structures based on n(p)-Hg1–xCdxTe (x = 0.21–0.23) grown by molecular-beam epitaxy on Si and GaAs substrates is studied. The possibility of increasing the value of the product o ... More
Source: Molecules. 2023. Vol. 28, № 4. P. 1629 (1-22)
Type: статьи в журналах
Date: 2023
Description: A new multicationic structurally disordered K5FeHf(MoO4)6 crystal belonging to the molybdate family is synthesized by the two-stage solid state reaction method. The characterization of the electronic ... More
Source: Plants. 2022. Vol. 11, № 21. P. 2873 (1-22)
Type: статьи в журналах
Date: 2022
Description: Axyris is a small genus of six species with a disjunct geographic range. Five species are present in Siberia, Central Asia, the Himalayas, and Tibet, whereas Axyris caucasica has been registered in th ... More
Source: Journal of electronic materials. 2021. Vol. 50, № 6. P. 3714-3721
Type: статьи в журналах
Date: 2021
Description: Accumulation of arsenic implantation-induced donor defects in heteroepitaxial Hg1−xCdxTe structures with the composition of the active layer xa = 0.30 was studied with the use of the Hall-efect measur ... More
Source: Pharmaceutical chemistry journal. 2017. Vol. 50, № 10. P. 654-658
Type: статьи в журналах
Date: 2017
Description: Decoctions of two herbal mixtures including Filipendula ulmaria (L.) Maxim. (meadowsweet), Vaccinium myrtillus L. (bilberry), and shoot and green leaves of Bergenia crassifolia (L.) Fritsch. (badan) w ... More
Source: Lubricants. 2022. Vol. 10, № 7. P. 140 (1-27)
Type: статьи в журналах
Date: 2022
Description: WC/Y-TZP-Al2O3 hybrid ceramic-matrix composites (CMCs) with dispersed Hadfield steel particles were sintered and then tested at sliding speeds in the range of 7-37 m/s and contact pressure 5 MPa. Fast ... More
Source: Semiconductor science and technology. 2019. Vol. 34, № 3. P. 035009 (1-7)
Type: статьи в журналах
Date: 2019
Description: The results from the electrical profiling of an n-on-p junction formed by 190-keV arsenic ion implantation in an indium/vacancy–doped Hg0.78Cd0.22Te film are presented. Mobility spectrum analysis in c ... More

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