Электронная библиотека (репозиторий) Томского государственного университета

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Add   Morphology, structure, and optical properties of SnO (x) films
Authors: Timofeev, V. A. | Mashanov, Vladimir I. | Azarov, Ivan A. | Loshkarev, Ivan D. | Korolkov, Ilya V. | Gavrilova, Tatiana A. | Esin, M. Yu. | Nikiforov, Alexander I.
Source: Russian physics journal. 2020. Vol. 63, № 2. P. 276-281
Type: статьи в журналах
Date: 2020
Description: The paper presents the morphological, structural, and optical properties of nanostructured SnO (x) films
Add   Elastically stressed pseudomorphic SiSn island array formation with a pedestal on the Si(1 0 0) substrate using Sn as a growth catalyst
Authors: Timofeev, V. A. | Mashanov, Vladimir I. | Gavrilova, Tatiana A. | Gulyaev, D. V. | Nikiforov, Alexander I.
Source: Journal of crystal growth. 2019. Vol. 518. P. 103-107
Type: статьи в журналах
Date: 2019
Description: The Sn-rich islands with a Si pedestal on the Si(1 0 0) substrate were obtained by the molecular-beam epitaxy technique. Initially, Sn films of different thicknesses were formed on the Si surface and ... More
Add   Studying the formation of Si (100) stepped surface in molecular-beam epitaxy
Authors: Hervieu, Yurij Yurevich | Timofeev, V. A. | Nikiforov, Alexander I. | Esin, M. Yu.
Source: Russian physics journal. 2018. Vol. 61, № 7. P. 1210-1214
Type: статьи в журналах
Date: 2018
Description: Experimental studies of the formation of a stepped surface structure during molecular-beam epitaxy of silicon on a Si (100) substrate have been carried out in wide ranges of variation of the substrate ... More
Add   Growth of epitaxial SiSn films with high Sn content for IR converters
Authors: Timofeev, V. A. | Kokhanenko, Andrey P. | Tuktamyshev, A. R. | Mashanov, V. I. | Loshkarev, I. D. | Novikov, Vladimir A. | Nikiforov, A. I.
Source: Russian physics journal. 2017. Vol. 60, № 2. P. 354-359
Type: статьи в журналах
Date: 2017
Description: Growth of SiSn compounds with a Sn content from 10 to 35% is studied. The morphology and surface structure of the SiSn layers are examined and the kinetic diagram of the morphological state of SiSn fi ... More
Add   Synthesis of epitaxial films based on Ge-Si-Sn materials with Ge/GeSn, Ge/GeSiSn, and GeSn/GeSiSn heterojunctions
Authors: Timofeev, V. A. | Nikiforov, Alexander I. | Mashanov, V. I. | Tuktamyshev, A. R. | Loshkarev, I. D. | Kokhanenko, Andrey P.
Source: Russian physics journal. 2015. Vol. 58, № 7. P. 965-969
Type: статьи в журналах
Date: 2015
Description: Results of investigations into the synthesis of heterostructures based on Ge–Si–Sn materials by the method of low-temperature molecular beam epitaxy are presented. The formation of epitaxial films dur ... More
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