Электронная библиотека (репозиторий) Томского государственного университета
квантовая эффективность

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Add   On the effect of ballistic overflow on the temperature dependence of the quantum efficiency of InGaN/GaN multiple quantum well light-emitting diodes
Authors: Kopyev, V. V. | Romanov, I. S. | Oleynik, V. L. | Prudaev, Ilya A.
Source: Semiconductors. 2017. Vol. 51, № 2. P. 232-238
Type: статьи в журналах
Date: 2017
Description: The dependences of the quantum efficiency of InGaN/GaN multiple quantum well light-emitting diodes on the temperature and excitation level are studied. The experiment is performed for two luminescence ... More
Add   Temperature dependence of quantum efficiency of InGaN/GaN led structures at high current density
Authors: Prudaev, Ilya A. | Romanov, I. S. | Brudnyi, V. N. | Kopyev, V. V.
Source: Russian physics journal. 2015. Vol. 58, № 5. P. 641-645
Type: статьи в журналах
Date: 2015
Description: Temperature dependence of quantum efficiency of blue LED structures based on multiple InGaN/GaN quantum wells is studied at different forward currents. At high current densities, an increase in the qu ... More
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