Электронная библиотека (репозиторий) Томского государственного университета
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Add   The physical mechanism underpinning superfast switching of GaAs S-diode
Authors: Vainshtein, Sergey N. | Prudaev, Ilya A. | Duan, Guoyong | Rahkonen, Timo
Source: Solid state communications. 2023. Vol. 365. P. 115111 (1-8)
Type: статьи в журналах
Date: 2023
Description: Recently a physical phenomenon termed “collapsing field domains” (CFDs) was discovered, which manifests itself in several avalanching gallium arsenide (GaAs) structures. The phenomenon consists of the ... More
Add   The mechanism of superfast switching of avalanche S-diodes based on GaAs doped with Cr and Fe
Authors: Oleinik, Vladimir L. | Smirnova, Tatyana E. | Kopyev, Viktor V. | Verkholetov, Maksim G. | Balzovsky, Evgeny V. | Tolbanov, Oleg P. | Prudaev, Ilya A.
Source: IEEE transactions on electron devices. 2018. Vol. 65, № 8. P. 3339-3344
Type: статьи в журналах
Date: 2018
Description: The results of theoretical and experimental investigation of charge carrier transport in avalanche S-diodes based on π-ν-n and π-n structures are presented. High-ohmic layers of the diodes were made b ... More
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