Электронная библиотека (репозиторий) Томского государственного университета
Verkholetov, Maksim G.

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Add   Avalanche delay and dynamic triggering in gaas-based s-diodes doped with deep level impurity
Authors: Prudaev, Ilya A. | Vainshtein, Sergey N. | Verkholetov, Maksim G. | Oleinik, Vladimir L. | Kopyev, Viktor V.
Source: IEEE transactions on electron devices. 2021. Vol. 68, № 1. P. 57-65
Type: статьи в журналах
Date: 2021
Description: The article is concerned with a detailed switching delay effect exhibited by avalanche S-diodes-superfast GaAs closing switches doped with deep Fe centers. The current and voltage time dependences are ... More
Add   Charge carrier transport and deep levels recharge in avalanche s-diodes based on GaAs
Authors: Verkholetov, Maksim G. | Koroleva, A. D. | Tolbanov, Oleg P. | Prudaev, Ilya A.
Source: Technical physics letters. 2018. Vol. 44, № 6. P. 465-468
Type: статьи в журналах
Date: 2018
Description: Carrier transport and deep-level recharging in semiconductor avalanche S-diode structures have been investigated. Gallium-arsenide n+–π–ν–n structures with the diffusion distribution of deep iron acce ... More
Add   The mechanism of superfast switching of avalanche S-diodes based on GaAs doped with Cr and Fe
Authors: Oleinik, Vladimir L. | Smirnova, Tatyana E. | Kopyev, Viktor V. | Verkholetov, Maksim G. | Balzovsky, Evgeny V. | Tolbanov, Oleg P. | Prudaev, Ilya A.
Source: IEEE transactions on electron devices. 2018. Vol. 65, № 8. P. 3339-3344
Type: статьи в журналах
Date: 2018
Description: The results of theoretical and experimental investigation of charge carrier transport in avalanche S-diodes based on π-ν-n and π-n structures are presented. High-ohmic layers of the diodes were made b ... More
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