Электронная библиотека (репозиторий) Томского государственного университета
Brudnyi, Valentin N. | Prudaev, Ilya A.

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Add   Diffusion of magnesium in LED structures with InGaN/GaN quantum wells at true growth temperatures 860-980°C of p-GaN
Authors: Romanov, I. S. | Prudaev, Ilya A. | Brudnyi, Valentin N.
Source: Russian physics journal. 2018. Vol. 61, № 1. P. 187-190
Type: статьи в журналах
Date: 2018
Description: The results of an investigation of Mg diffusion in blue LED structures with InGaN/GaN quantum wells are presented for various growth temperatures of the p-GaN layer. The values of the diffusion coeffi ... More
Add   Electron irradiation degradation of AlGaInP/GaAs light‐emitting diodes
Authors: Brudnyi, Valentin N. | Oleinik, Vladimir | Marmaluk, Alexander A. | Prudaev, Ilya A.
Source: Physica status solidi A : applications and materials science. 2018. Vol. 215, № 8. P. 1700445 (1-5)
Type: статьи в журналах
Date: 2018
Description: Red and yellow AlGaInP/GaAs light‐emitting diodes (LEDs) with multiple quantum wells grown by the metalorganic chemical vapor deposition technique were irradiated at room temperature by 10 MeV electro ... More
Add   Led InGaN/GaN structures with short-period superlattice grown on flat and patterned sapphire substrates
Authors: Romanov, I. S. | Brudnyi, Valentin N. | Kopyev, V. V. | Novikov, Vadim A. | Marmalyuk, A. A. | Kureshov, V. A. | Sabitov, D. R. | Mazalov, A. V. | Prudaev, Ilya A.
Source: Russian physics journal. 2015. Vol. 57, № 11. P. 1604-1608
Type: статьи в журналах
Date: 2015
Description: The results of studies of blue LED InGaN/GaN heterostructures with a short-period InGaN/GaN superlattice in front of an active region of the structure grown on flat and patterned Al2O3 substrates are ... More
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