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Source: Semiconductors. 2015. Vol. 49, № 3. P. 345-351
Type: статьи в журналах
Date: 2015
Description:
We investigate the effect of thermal annealing in argon and of oxygen plasma processing on the photoelectric properties of GaAs-Ga2O3-Me structures. Gallium-oxide films are fabricated by photostimulat
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Source: Semiconductors. 2012. Vol. 46, № 8. P. 1003-1007
Type: статьи в журналах
Date: 2012