On the effect of ballistic overflow on the temperature dependence of the quantum efficiency of InGaN/GaN multiple quantum well light-emitting diodes

doi:10.1134/S1063782617020166

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On the effect of ballistic overflow on the temperature dependence of the quantum efficiency of InGaN/GaN multiple quantum well light-emitting diodes	402 KB	Adobe Acrobat PDF	Read	Download
DOI Доступ к ресурсу на сайте издателя			10.1134/S1063782617020166

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Title: On the effect of ballistic overflow on the temperature dependence of the quantum efficiency of InGaN/GaN multiple quantum well light-emitting diodes
Creator: Kopyev, V. V.
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Romanov, I. S.
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Oleynik, V. L.
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Prudaev, Ilya A.
Date: 2017
DOI: 10.1134/S1063782617020166
Description: The dependences of the quantum efficiency of InGaN/GaN multiple quantum well light-emitting diodes on the temperature and excitation level are studied. The experiment is performed for two luminescence excitation modes. A comparison of the results obtained during photo- and electroluminescence shows an additional (to the loss associated with Auger recombination) low-temperature loss in the high-density current region. This causes inversion of the temperature dependence of the quantum efficiency at temperatures lower than 220–300 K. Analysis shows that the loss is associated with electron leakage from the light-emitting-diode active region. The experimental data are explained using the ballistic-overflow model. The simulation results are in qualitative agreement with the experimental dependences of the quantum efficiency on temperature and current density.

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collection(s): Радиофизический факультет | Научное управление
Identifier: смотреть в электронном каталоге НБ ТГУ
Type: статьи в журналах
Source: Semiconductors. 2017. Vol. 51, № 2. P. 232-238
Language: eng

Created: 26-10-2017

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Радиофизический факультет

Научное управление On the effect of ballistic overflow on the temperature dependence of the quantum efficiency of InGaN/GaN multiple quantum well light-emitting diodes