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Authors:
Nikolaev, Vladimir I. |
Polyakov, Alexander |
Stepanov, Sergey I. |
Almaev, Aleksei V. |
Pechnikov, Aleksei I. |
Yakimov, Eugene |
Kushnarev, Bogdan O. |
Shchemerov, Ivan |
Scheglov, Mikhail P. |
Chernykh, Alexey |
Vasilev, Anton |
Kochkova, Anastasia |
Guzilova, Lyubov I. |
Pearton, Stephen J.
Source: Journal of physics D: Applied physics. 2022. Vol. 55, № 49. P. 495102
Type: статьи в журналах
Date: 2022
Description:
Heavily Sn-doped films of α-Ga2O3 were grown by halide vapor phase epitaxy (HVPE) on basal plane c-sapphire and on (10-12) r-sapphire substrates with and without α-Cr2O3 thin buffers prepared by magne
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Authors:
Polyakov, Alexander |
Nikolaev, Vladimir I. |
Stepanov, Sergey I. |
Almaev, Aleksei V. |
Pechnikov, Aleksei I. |
Yakimov, Eugene |
Kushnarev, Bogdan O. |
Shchemerov, Ivan |
Scheglov, Mikhail P. |
Chernykh, Alexey |
Vasilev, Anton |
Kochkova, Anastasia |
Pearton, Stephen J.
Source: Journal of applied physics. 2022. Vol. 131, № 21. P. 215701-1-215701-8
Type: статьи в журналах
Date: 2022
Description:
We report on growth and electrical properties of α-Ga2O3 films prepared by halide vapor phase epitaxy (HVPE) at 500 °C on α-Cr2O3 buffers predeposited on sapphire by magnetron sputtering. The α-Cr2O3
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