Электронная библиотека (репозиторий) Томского государственного университета
Mikhailov, N. N.

Add to Quick Collection   All 3 Results

Showing items 1 - 3 of 3.
  • «
  • ←
  • 1
  • →
  • »
Sort:
 Add All Items to Quick Collection
Add   Influence of a high-frequency pulsed nanosecond diffusion discharge in the nitrogen atmosphere on the electrical characteristics of a CdHgTe epitaxial films
Authors: Voytsekhovskiy, Alexander V. | Korotaev, A. G. | Lyapunov, D. V. | Lozovoy, Kirill A. | Tarasenko, Viktor Fedotovich | Shulepov, Mikhail A. | Erofeev, Mikhail V. | Ripenko, V. | Dvoretsky, Sergei A. | Grigoryev, Denis V. | Mikhailov, N. N.
Source: Journal of Physics: Conference Series. 2017. Vol. 830. P. 012082 (1-4)
Type: статьи в журналах
Date: 2017
Description: The effect of a high-frequency nanosecond volume discharge forming in an inhomogeneous electrical field at atmospheric pressure on the CdHgTe (CMT) epitaxial films is studied. The measurement of the e ... More
Add   Optical and electrical studies of arsenic-implanted HgCdTe films grown with molecular beam epitaxy on GaAs and Si substrates
Authors: Izhnin, Igor I. | Korotaev, A. G. | Fitsych, O. I. | Bonchyk, A. Yu. | Savytskyy, H. V. | Mynbaev, K. D. | Varavin, V. S. | Dvoretsky, Sergei A. | Mikhailov, N. N. | Voytsekhovskiy, Alexander V. | Yakushev, M. V. | Jakiela, R.
Source: Infrared physics and technology. 2017. Vol. 81. P. 52-58
Type: статьи в журналах
Date: 2017
Description: A defect study was performed on arsenic-implanted Hg1-xCdxTe (x = 0.23–0.30) films with graded-gap surface layers, grown with molecular-beam epitaxy on GaAs and Si substrates and designed for fabricat ... More
Add   Background donor concentration in HgCdTe
Authors: Pociask-Bialy, M. | Voytsekhovskiy, Alexander V. | Korotaev, A. G. | Fitsych, O. I. | Dvoretsky, Sergei A. | Mikhailov, N. N. | Yakushev, M. V. | Mynbaev, K. D. | Izhnin, I. I.
Source: Opto-electronics review. 2013. Vol. 23, № 3. P. 200-207
Type: статьи в сборниках
Date: 2014
  • «
  • ←
  • 1
  • →
  • »
^