Электронная библиотека (репозиторий) Томского государственного университета
Loshkarev, I. D.

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Add   Growth of epitaxial SiSn films with high Sn content for IR converters
Authors: Timofeev, V. A. | Kokhanenko, Andrey P. | Tuktamyshev, A. R. | Mashanov, V. I. | Loshkarev, I. D. | Novikov, Vladimir A. | Nikiforov, A. I.
Source: Russian physics journal. 2017. Vol. 60, № 2. P. 354-359
Type: статьи в журналах
Date: 2017
Description: Growth of SiSn compounds with a Sn content from 10 to 35% is studied. The morphology and surface structure of the SiSn layers are examined and the kinetic diagram of the morphological state of SiSn fi ... More
Add   Synthesis of epitaxial films based on Ge-Si-Sn materials with Ge/GeSn, Ge/GeSiSn, and GeSn/GeSiSn heterojunctions
Authors: Timofeev, V. A. | Nikiforov, Alexander I. | Mashanov, V. I. | Tuktamyshev, A. R. | Loshkarev, I. D. | Kokhanenko, Andrey P.
Source: Russian physics journal. 2015. Vol. 58, № 7. P. 965-969
Type: статьи в журналах
Date: 2015
Description: Results of investigations into the synthesis of heterostructures based on Ge–Si–Sn materials by the method of low-temperature molecular beam epitaxy are presented. The formation of epitaxial films dur ... More
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