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Source: Atomic and Molecular Pulsed Lasers : 12 International Conference, September 14-18, 2015, Tomsk, Russia : abstracts. Tomsk, 2015. P. 83
Type: статьи в сборниках
Date: 2015
Source: Optics express. 2015. Vol. 23, № 25. P. 32820-32834
Type: статьи в журналах
Date: 2015
Description:
High optical quality nonlinear crystals of solid solution GaSe1−xSx, x=0, 0.05, 0.11, 0.22, 0.29, 0.44, 1 were grown by modified Bridgman method with heat field rotation. Ordinary and extraordinary wa
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Authors:
Guo, Jin |
Li, Dian-Jun |
Yang, Gui-Long |
Chen, Fei |
Wang, Chun-Rui |
Zhang, Lai-Ming |
Andreev, Yury M. |
Kokh, Konstantin A. |
Lanskii, Grigory V. |
Xie, Ji-Jiang |
Svetlichnyi, Valerii A.
Source: Light: Science & Applications. 2015. Vol. 4. P. e362 (1-12)
Type: статьи в журналах
Date: 2015
Description:
In this review, we introduce the current state of the art of the growth technology of pure, lightly doped, and heavily doped (solid solution) nonlinear gallium selenide (GaSe) crystals that are able t
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Source: Materials Chemistry and Physics. 2015. Vol. 154. P. 152-157
Type: статьи в журналах
Date: 2015
Source: Laser physics letters. 2015. Vol. 12, № 11. P. 115402 (1-3)
Type: статьи в журналах
Date: 2015
Description:
High quality lithium borate (LBO) samples cut along (1 0 0), (0 1 0) and (0 0 1) axes were studied by terahertz time-domain spectroscopy (THz TDS) between 0.2–3 THz. It was found that in the direction
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Source: Proceedings of SPIE. 2015. Vol. 9810 : XII International Conference on Atomic and Molecular Pulsed Lasers, 13–18 September 2015, Tomsk, Russian Federation. P. 981012-1-981012-10
Type: статьи в журналах
Date: 2015
Description:
Ab-initio study on modification of commerce terahertz spectrometer with time resolution Z-3 (Zomega, USA) by substitution of ZnTe and GaP detectors and LT-GaAs generator for homemade of pure and S-dop
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Source: Atomic and Molecular Pulsed Lasers : 12 International Conference, September 14-18, 2015, Tomsk, Russia : abstracts. Tomsk, 2015. P. 81-82
Type: статьи в сборниках
Date: 2015
Source: Atomic and Molecular Pulsed Lasers : 12 International Conference, September 14-18, 2015, Tomsk, Russia : abstracts. Tomsk, 2015. P. 122-123
Type: статьи в сборниках
Date: 2015
Source: Atomic and Molecular Pulsed Lasers : 12 International Conference, September 14-18, 2015, Tomsk, Russia : abstracts. Tomsk, 2015. P. 121-122
Type: статьи в сборниках
Date: 2015
Source: Proceedings of SPIE. 2015. Vol. 9810 : XII International Conference on Atomic and Molecular Pulsed Lasers, 13–18 September 2015, Tomsk, Russian Federation. P. 98101P-1-98101P-7
Type: статьи в журналах
Date: 2015
Description:
Design of top S-doped GaSe growth technology is completed. New methods for characterization of high optical quality crystals are proposed that allowed selection optimally doped crystals. Frequency con
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Source: Atomic and Molecular Pulsed Lasers : 12 International Conference, September 14-18, 2015, Tomsk, Russia : abstracts. Tomsk, 2015. P. 11-12
Type: статьи в сборниках
Date: 2015