Authors: Mynbaev, Karim D. | Voytsekhovskiy, Alexander V. | Korotaev, Alexander G. | Syvorotka, I. I. | Fitsych, Olena I. | Varavin, Vasilii S. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Remesnik, V. G. | Yakushev, Maxim V. | Świątek, Zbigniew | Morgiel, Jerzy | Bonchyk, A. Yu. | Savytskyy, Hrygory V. | Izhnin, Igor I.

Source: Infrared physics and technology. 2019. Vol. 98. P. 230-235

Type: статьи в журналах

Date: 2019

Description: The Hall-effect/electrical conductivity measurements and mobility spectrum analysis (MSA) have been used for the study of the profiles of different electron species and corresponding defects induced i ... More

Authors: Fitsych, Olena I. | Świątek, Zbigniew | Morgiel, Y. | Bonchyk, A. Yu. | Savytskyy, Hrygory V. | Mynbaev, Karim D. | Voytsekhovskiy, Alexander V. | Korotaev, Alexander G. | Yakushev, Maxim V. | Marin, Denis V. | Varavin, Vasilii S. | Dvoretsky, Sergei A. | Izhnin, Igor I.

Source: Opto-electronics review. 2019. Vol. 27, № 1. P. 14-17

Type: статьи в журналах

Date: 2019

Description: Effect of annealing on the structural properties of arsenic-implanted mercury cadmium telluride film grown by molecular beam epitaxy was studied with the use of transmission electron microscopy and op ... More

Authors: Syvorotka, I. I. | Fitsych, Olena I. | Varavin, Vasilii S. | Dvoretsky, Sergei A. | Marin, D. V. | Mikhailov, Nikolay N. | Remesnik, V. G. | Yakushev, Maxim V. | Mynbaev, Karim D. | Izhnin, Igor I. | Voytsekhovskiy, Alexander V. | Korotaev, A. G.

Source: Semiconductor science and technology. 2019. Vol. 34, № 3. P. 035009 (1-7)

Type: статьи в журналах

Date: 2019

Description: The results from the electrical profiling of an n-on-p junction formed by 190-keV arsenic ion implantation in an indium/vacancy–doped Hg0.78Cd0.22Te film are presented. Mobility spectrum analysis in c ... More

Authors: Grigoryev, Denis V. | Korotaev, A. G. | Kokhanenko, Andrey P. | Lozovoy, Kirill A. | Izhnin, Igor I. | Savytskyy, Hrygory V. | Bonchyk, A. Yu. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Voytsekhovskiy, Alexander V. | Varavin, Vasilii S. | Yakushev, Maxim V.

Source: Materials research express. 2019. Vol. 6, № 7. P. 075912 (1-8)

Type: статьи в журналах

Date: 2019

Description: In this paper experimental results of research of boron ion implantation into Hg1−x Cd x Te epitaxial films of various compositions x are presented. Samples of epitaxial films were grown by the method ... More

Authors: Izhnin, A. I. | Fitsych, Olena I. | Voytsekhovskiy, Alexander V. | Gorn, Dmitriy Igorevich | Semakova, A. A. | Bazhenov, N. L. | Mynbaev, Karim D. | Zegrya, G. G. | Izhnin, Igor I.

Source: Applied nanoscience. 2019. Vol. 9, № 5. P. 617-622

Type: статьи в журналах

Date: 2019

Description: Results of photoluminescence studies of single-quantum-well HgCdTe-based structures and electroluminescence studies of multiple-quantum-well InAsSb-based structures are reported. HgCdTe structures wer ... More

Authors: Savytskyy, Hrygory V. | Świątek, Zbigniew | Morgiel, Y. | Izhnin, Igor I. | Voytsekhovskiy, Alexander V. | Korotaev, A. G. | Mynbaev, Karim D. | Fitsych, Olena I. | Varavin, Vasilii S. | Bonchyk, A. Yu. | Dvoretsky, Sergei A. | Marin, Denis V. | Yakushev, Maxim V.

Source: Applied nanoscience. 2019. Vol. 9, № 5. P. 725-730

Type: статьи в журналах

Date: 2019

Description: Radiation damage and its transformation under annealing were studied with bright-field and high-resolution transmission electron microscopy for arsenic-implanted HgCdTe films with graded-gap surface l ... More