Электронная библиотека (репозиторий) Томского государственного университета
Eremeev, Sergey V. | статьи в журналах

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Source: Magnetism. 2022. Vol. 2, № 1. P. 1-9
Type: статьи в журналах
Date: 2022
Description: Thin films of magnetic topological insulators (TIs) are expected to exhibit a quantized anomalous Hall effect when the magnetizations on the top and bottom surfaces are parallel and a quantized topolo ... More
Source: Physical Review Letters. 2022. Vol. 129, № 16. P. 166802-1-166802-6
Type: статьи в журналах
Date: 2022
Description: New spin-dependent photoemission properties of alkali antimonide semiconductor cathodes are predicted based on the detected optical spin orientation effect and DFT band structure calculations. Using t ... More
Source: The journal of physical chemistry letters. 2021. Vol. 12, № 34. P. 8328-8334
Type: статьи в журналах
Date: 2021
Description: Discovered in 1962, the divalent ferromagnetic semiconductor EuS (T-C = 16.5 K, E-g = 1.65 eV) has remained constantly relevant to the engineering of novel magnetically active interfaces, heterostruct ... More
Source: Applied surface science. 2020. Vol. 501. P. 144253 (1-7)
Type: статьи в журналах
Date: 2020
Description: So-called metal-induced silicon reconstructions (i.e., metal films of monolayer or submonolayer thickness epitaxially grown on single-crystal silicon substrates in ultra-high vacuum) represent a speci ... More
Source: Journal of physics: Condensed matter. 2019. Vol. 31, № 12. P. 1-8
Type: статьи в журналах
Date: 2019
Description: We present a theoretical investigation of the structural and vibrational properties of ordered 2D phases formed by the Li, Na and K atoms on the Cu surface. The lattice relaxation, phonon dispersions ... More
Source: Physical Review Letters. 2019. Vol. 122, № 10. P. 107202-1-107202-6
Type: статьи в журналах
Date: 2019
Description: Using density functional theory and Monte Carlo calculations, we study the thickness dependence of the magnetic and electronic properties of a van der Waals interlayer antiferromagnet in the two-dimen ... More
Source: Journal of physics: Condensed matter. 2018. Vol. 30, № 2. P. 025002 (1-8)
Type: статьи в журналах
Date: 2018
Description: Formation of the highly-ordered √7×√7-periodicity 2D compound has been detected in the (Tl, Au)/Si(111) system as a result of Au deposition onto the Tl/Si(111) surface and its composition, structure a ... More
Source: Physica status solidi - Rapid research letters. 2018. Vol. 12, № 12. P. 1800341 (1-8)
Type: статьи в журналах
Date: 2018
Description: By means of angle‐resolved photoemission spectroscopy measurements, the electronic band structure of the three‐dimensional PbBi4Te7 and PbBi6Te10 topological insulators is compared. The measurements c ... More
Source: Physical Review B. 2018. Vol. 97, № 20. P. 205113-1-205113-6
Type: статьи в журналах
Date: 2018
Description: We have grown the phase-homogeneous ternary compound with composition Bi2Te1.85S1.15 very close to the stoichiometric Bi2Te2S. The measurements performed with spin- and angle-resolved photoelectron sp ... More
Source: Journal of physics: Condensed matter. 2018. Vol. 30, № 41. P. 415502 (1-7)
Type: статьи в журналах
Date: 2018
Description: Heavy metal layers having a honeycomb structure on the Si(1 1 1) surface were theoretically predicted to show prospects for possessing properties of the quantum spin Hall (QSH) insulators. The (Tl, Rb ... More
Source: Nano letters. 2018. Vol. 18, № 10. P. 6521-6529
Type: статьи в журналах
Date: 2018
Description: Magnetic proximity effect at the interface between magnetic and topological insulators (MIs and TIs) is considered to have great potential in spintronics as, in principle, it allows realizing the quan ... More
Source: New journal of physics. 2018. Vol. 20, № 6. P. 063035 (1-8)
Type: статьи в журналах
Date: 2018
Description: The layered polar semiconductor BiTeI exhibits large Rashba-type spin–orbit splittings in its bulk and surface electronic structure. Here we report an artificial structural modification near the surfa ... More
Source: Nano letters. 2018. Vol. 18, № 7. P. 4338-4345
Type: статьи в журналах
Date: 2018
Description: Two-dimensional (2D) topological insulator is a promising quantum phase for achieving dissipationless transport due to the robustness of the gapless edge states resided in the insulating gap providing ... More
Source: Scientific Reports [Еlectronic resource]. 2016. Vol. 6. P. 20734 (1-7)
Type: статьи в журналах
Date: 2016
Description: Strong topological insulators (TIs) support topological surfaces states on any crystal surface. In contrast, a weak, time-reversal-symmetry-driven TI with at least one non-zero v1, v2, v3 ℤ2 index sho ... More
Source: ACS Nano. 2016. Vol. 10, № 3. P. 3518-3524
Type: статьи в журналах
Date: 2016
Description: By means of angle-resolved photoemission spectroscopy (ARPES) measurements, we unveil the electronic band structure of three-dimensional PbBi6Te10 topological insulator. ARPES investigations evidence ... More
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