Электронная библиотека (репозиторий) Томского государственного университета
Novikov, Vadim A. | Degtyarenko, Konstantin M.
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    Add   Admittance characterization of pentacene metal-insulator-semiconductor capacitors with SiO2 and SiO2/Ga2O3 insulators in temperature range of 9-300 K
    Authors: Nesmelov, Sergey N. | Novikov, Vadim A. | Dzyadukh, Stanislav M. | Kopylova, Tatyana N. | Ivonin, Ivan V. | Degtyarenko, Konstantin M. | Tereshchenko, Evgeny V. | Voytsekhovskiy, Alexander V.
    Source: Thin solid films. 2019. Vol. 692. P. 137622 (1-7)
    Type: статьи в журналах
    Date: 2019
    Description: Pentacene-based metal-insulator-semiconductor capacitors with SiO2 and SiO2/Ga2O3 insulators were investigated in the temperature range of 9–300 K. The capacitance-voltage curves of the fabricated cap ... More
    Add   Electrophysical characteristics of the pentacene-based MIS structures with a SiO2 insulator
    Authors: Voytsekhovskiy, Alexander V. | Nesmelov, Sergey N. | Dzyadukh, Stanislav M. | Kopylova, Tatyana N. | Degtyarenko, Konstantin M. | Chernikov, E. V. | Kalygina, V. M. | Novikov, Vadim A.
    Source: Russian physics journal. 2019. Vol. 62, № 1. P. 90-99
    Type: статьи в журналах
    Date: 2019
    Description: In a wide range of frequencies and temperatures, the admittance of MIS structures based on pentacene organic films, formed by thermal evaporation in vacuum on SiO2 and SiO2/Ga2O3 substrates, was exper ... More
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