Электронная библиотека (репозиторий) Томского государственного университета
2023

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Source: IEEE sensors journal. 2023. Vol. 23, № 3. P. 1885-1895
Type: статьи в журналах
Date: 2023
Description: The effect of the Si+ ion implantation on the gas-sensing properties of single-crystal (0001) α-Ga2O3 films grown by halide vapor phase epitaxy (HVPE) has been studied. It is established that irradiat ... More
Source: Micromachines. 2023. Vol. 14, № 10. P. 1875 (1-14)
Type: статьи в журналах
Date: 2023
Description: The gas sensitivity and structural properties of TiO2 thin films deposited by plasma-enhanced atomic layer deposition (ALD) were examined in detail. The TiO2 thin films are deposited using Tetrakis(di ... More
Source: Chemosensors. 2023. Vol. 11, № 6. P. 325 (1-15)
Type: статьи в журналах
Date: 2023
Description: The structural and gas-sensitive properties of n-N SnO2/κ(ε)-Ga2O3:Sn heterostructures were investigated in detail for the first time. The κ(ε)-Ga2O3:Sn and SnO2 films were grown by the halide vapor p ... More
Source: IEEE sensors journal. 2023. Vol. 23, № 14. P. 15530-15536
Type: статьи в журналах
Date: 2023
Description: In this report, we consider the effect of radiation with radiation energy below the β -Ga 2 O 3 band-gap on the photoelectric characteristics of ultraviolet (UV) radiation detectors based on gallium o ... More
Source: Materials. 2023. Vol. 16, № 1. P. 342 (1-16)
Type: статьи в журналах
Date: 2023
Description: Indium tin oxide thin films were deposited by magnetron sputtering on ceramic aluminum nitride substrates and were annealed at temperatures of 500 °C and 600 °C. The structural, optical, electrically ... More
Source: Materials today communications. 2023. Vol. 34. P. 105241 (1-10)
Type: статьи в журналах
Date: 2023
Description: The effect of H2, NH3, CO, CH4, O2 and NO2 on the electroconductive properties of the In2O3-Ga2O3 mixed compounds films obtained by the halide vapor phase epitaxy was studied. In the temperature range ... More
Source: IEEE sensors journal. 2023. Vol. 23, № 17. P. 19245-19255
Type: статьи в журналах
Date: 2023
Description: The MSM structures based on high-quality 1.6- μm -thick α -gallium oxide (Ga2O3) films grown by the halide vapor phase epitaxy with Ti/Ni interdigital contacts were developed for the detection of shor ... More
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