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Source: Physical Review B. 2015. Vol. 92. P. 081409-1-081409-5
Type: статьи в журналах
Date: 2015
Description:
The electronic properties of epitaxial graphene grown on SiC(0001) are known to be impaired relative to those of freestanding graphene. This is due to the formation of a carbon buffer layer between th
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Source: Physical Review B. 2015. Vol. 91, № 21. P. 214112-1-214112-7
Type: статьи в журналах
Date: 2015
Description:
A recently discovered phase of orthorhombic iron carbide o-Fe7C3 [Prescher et al., Nat. Geosci. 8, 220 (2015)10.1038/ngeo2370] is assessed as a potentially important phase for interpretation of the pr
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Source: IOP Conference Series: Materials Science and Engineering. 2015. Vol. 71. P. 012078 (1-6)
Type: статьи в журналах
Date: 2015
Description:
Computer simulations in the framework of the Density Functional Theory have become an established tool for computer simulations of materials properties. In most cases, however, information is obtained
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Source: Перспективные материалы с иерархической структурой для новых технологий и надежных конструкций : международная конференция, 21-25 сентября 2015 г., Томск, Россия : тезисы докладов. Томск, 2015. С. 393-394
Type: статьи в сборниках
Date: 2015
Source: Physical Review B. 2015. Vol. 91, № 5. P. 054301-1-054301-17
Type: статьи в журналах
Date: 2015
Description:
We use ab initio and classical molecular dynamics (AIMD and CMD) based on the modified embedded-atom method (MEAM) potential to simulate diffusion of N vacancy and N self-interstitial point defects in
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Authors:
Gällström, Andreas |
Leone, Stefano |
Kordina, Olof |
Son, Nguyen T. |
Ivády, Viktor |
Gali, Adam |
Abrikosov, Igor A. |
Janzén, Erik |
Ivanov, Ivan G. |
Magnusson, Björn
Source: Physical Review B. 2015. Vol. 92, № 7. P. 075207-1-075207-14
Type: статьи в журналах
Date: 2015
Description:
The optical signature of niobium in the low-temperature photoluminescence spectra of three common polytypes of SiC (4H, 6H, and 15R) is observed and confirms the previously suggested concept that Nb o
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Source: Physical Review B. 2015. Vol. 91, № 12. P. 121201-1-121201-5
Type: статьи в журналах
Date: 2015
Description:
Silicon carbide with engineered point defects is considered as very promising material for the next generation devices, with applications ranging from electronics and photonics to quantum computing. I
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